OAK jurnallaridan yig‘ilgan 129907 ta ilmiy maqola: sarlavha, mualliflar, annotatsiya, kalit so‘zlar, DOI va tayyor iqtibos formatlari.
- INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Г. Гулямов, М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, М.К. Уктамова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
- INJECTION CURRENTS P-SI–N-SI1-XSNX–N+-SI1-XSNX (0X0.04)-STRUCTURES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, Х.М. Мадаминов, А.Ш. Икромов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
INJECTION CURRENTS P-SI–N-SI1-XSNX–N+-SI1-XSNX (0X0.04)-STRUCTURES
- THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.А. Корабоев, Д. Т. Якубов, Х.Х. Курбонов, У.К. Сапаев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
- STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, З.М. Хусанов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
The current-voltage characteristics of Au-nCdS- nSi-pCdTe-Au at 300 K. It was found that the current-voltage characteristics of such structures has three segments: power-law - I∝V2.44, sublinear V∝exp(Jad), and…
- EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES
G. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, F.R. Mukhiddinova · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed
- SELECTION CRITERIA FOR POWER TRANSISTORS OF DC-TO-DC VOLTAGE INVERTER OF STAND-ALONE PHOTOVOLTAIC SYSTEM
O.F. Tukfatullin, R.A. Muminov, K. A. Djumamuratov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
In this paper three criteria for choosing power switches for DC-to-DC converter o f stand-alone photovoltaic system voltage inverter was discussed, that allowed to choose metal oxide semiconductor field-effect…
- DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS
Branch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, S.M. Otajonov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films…
- EFFECTS OF TEMPERATURE AND A TRANSVERSAL QUANTIZING MAGNETIC FIELD ON THE FORBIDDEN BAND OF A QUANTUM WELL
N. А . S а yid о, R.G. R а khim о, J.I. Mirz а ev, U.B. Negmatov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
This article considers the temperature dependence of the band gap in quantum-well heterostructures in the presence of a transverse quantizing magnetic field. An analytical expression is obtained for determining the band…
- METHOD OF PREVENTING CONTAMINATION OF THE SURFACE OF PHOTOVOLTAIC CELLS
B.A. Yuldoshov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The paper considers the mechanisms of pol lution and deposition on the surface of photovoltaic batteries (PVB) in various conditions of the seasons and incidence angles from the degree of surface treatment of…
- TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR
N.F. Zikrillaev, М.К. Ha kk ulov, F. K. Shakarov, S.Y. Ma kh mudov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
A diffusion technology for doping silicon with impurity atoms of sulfur preventing surface erosion has been developed. The technology could be used to create relevant semiconductor devices. Controlling diffusant vapor…
- DEVICE FOR DETERMINING WATER CONTENT IN OIL AND PETROLEUM PRODUCTS
Kh.S. Daliev, O. Kh. Kuldashov, I.M. Boltaboev, G.A. Zhuraboeva · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
The article proposes a two - wave method for measuring the water content in oil and creates an optoelectronic device based on it. To develop this me thod, the absorption spectra of water were studied and it was shown…
- STUDYING THE INFLUENCE OF TEMPERATURE ON PHOTOELECTRIC PROCESSES IN SILICON SOLAR CELLS USING DIGITAL SIMULATION
R. Aliev, J. Ziyoitdinov, Jasurbek Gulomov, M. Abduvohidov, B. Urmanov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat…
- TO THE THEORY OF THE TWO AND THREE PHOTONIC LINEAR CIRCULAR DICHROISMS IN CUBIC SYMMETRY SEMICONDUCTORS
V. R. Rasulov, Rustam Yavkachovich Rasulov, I. Éshboltaev, M. X. Kuchkarov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
The linear - circular dichroism of two and three photon absorption of light in semiconductors of cubic symmetry of hole conductivity is theoretically investigated. The matrix elements of two and three - photon optical…
- STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON
S. Z. Zaynabidinov, N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
In this study, using the method of electron probe analysis, the sequence of formation of various impurity precipitates of nickel in silicon in the process of diffusion doping at a temperature of T = 1573 K was…
- FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES
R. Aliev, B. Rashidov, V. Abduazimov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
In this article, the experimental analysis of possibility of use of deformation of a crystal lattice of silicon for increase of efficiency of photoelectric transformation of energy made . For the first time the flex…
- INFLUENCE О F А STR О NG M А GNETIC FIELD О N FERMI ENERGY О SCILL А TI О NS IN TW О -DIMENSI О N А L SEMIC О NDUCT О R M А TERI А LS
U.I. Erk а b о ev, R.G. R а khim о, N. А . S а yid о, J.I. Mirz а ev, U.B. Negmatov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
This article shows that the Fermi levels of a nanoscale semiconductor in a quantizing magnetic field are quantized. A method is proposed for calculating the Fermi energy oscillations for a two-dimensional electron gas…
- DETERMINATION OF THE TEMPERATURE DE PENDENCE OF THE FERMI ENERGY OSCILLATIONS IN NANOSTRUCTURED SE MICONDUCTOR MATERIALS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELD
У. И. Эркабоев, N.A. Sayidov, Jasur Isroilovich Mirzaev, R. G. Rakhimov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
In this article investigated the effects of a quantizing magnetic field and temperature on Fermi energy oscillations in nanoscale semiconducto r materials. It is shown that the Fermi energy of a nanoscale semiconductor…
- GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH
K. A. Ismailov, E. J. Kosbergenov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
In this work, it is shown that the introducti on of nickel atoms in the process of growing a silicon crystal makes it possible to obtain a mate rial with stable electrophysical parameters during thermal annealing at a…
- NEW TYPES OF THERMAL ENERGY CONVERTERS BASED ON GRANULAR SILICON
B. M. Abdurakhmanov, M. M. Adilov, X. B. Ashurov, Mirtemir Kurbanov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
New types of thermal energy converters are described, the working fluid of which is made of granular silicon, which is a silicon powder, the particles of which are not sintered and are not fused with each other. In such…
- PREPARATION OF POLY (METHYL METHACRYLATE)-BASED POLYMER ELECTROLYTES FOR SOLID-STATE FOR Mg-ION BATTERIES
O. Mamatkarimov, B. Uktamaliyev, A. Abdukarimov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
It is known that the new metal-based solid polymer electrolyte batteries are characterized by high energy and power density, low cost, simplicity of manufacturing technology and long-term non-discharge. Therefore, the…
- L А ND А U LEVELS IN TW О -DIMENSI О N А L SEMIC О NDUCT О R STRUCTURES
G. Guly а m о, J.I. Mirz а ev, U.I. Erk а b о ev, А . О . Y о qubj о n о · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
В данной статье проводится математическое моделирование процессов с использованием экспериментальных значений непрерывного спектра плотности состояний в двумерных электронных газах и показана возможность расчета…
- TEMPERATURE DEPENDENCE OF ACTIVE AND REACTIVE IMPEDANCES OF PMMA-EC-LiTf 2 / MgTf 2 SOLID POLYMER ELECTROLYTES
O. Mamatkarimov, B. Uktamaliyev, A. Abdukarimov, A.K. Arof · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
In this work, PMMA-EC-LiTf 2 , PMMA-EC-MgTf 2 samples were prepared at a concentration of 20%. Using Nyquist coordinates, results were obtained fo r active and reactive impedances at temperatures from 243K to 283 K and…
- CALCULATION THE TEMPERATURE DEPEND ENCE THE ENERGY SPECTRUM OF CHARGE CARRIERS IN SEM ICONDUCTORS EXPOSED TO A STRONG MAGNETIC FIELD
M.G. Dadamirzayev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
The energy spectrum of free holes in a st rong magnetic field is calculated for a non- quadratic dispersion law. The temperature dependen ce of the broadening of the Landau levels of holes in crystals with the Kane…
- INFLUENCE OF THE EFFECTIVE MASS OF THE DENSITY OF THE STATE ON THE TEMPERATURE DEPENDENCE OF THE BAND BAND WIDTH IN SOLID SOLUTIONS p -Bi 2-x Sb x Te 3-y Se y
N.Y. Sharibaev, М. Г. Дадамирзаев, R.N. Sharifbaev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
The temperature dependence of the energy spectrum of semiconductors is well explained by the thermal broadening of discrete en ergy spectra. The temperature dependence of the band gap is considered as broadening of the…
- DETERMIN А TI О N О F DEPENDENCE О F THE B А ND G А P О N TEMPER А TURE А ND QU А NTIZING M А GNETIC FIELD IN ELECTR О NIC SEMIC О NDUCT О RS WITH А P А R А B О LIC DISPERSI О N L А W
U.I. Erk а b о ev, R.G. R а khim о, N. А . S а yid о, J.I. Mirz а ev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
DETERMIN А TI О N О F DEPENDENCE О F THE B АА new meth о d is pr о p о sed f о r c а lcul а ting the b а nd g а p in semic о nduct о rs t а king int о а cc о unt l а ttice vibr а ti о ns а nd therm а l sme а ring under…
- IMPEDANCE SPECTROSCOPY OF NEW TY PE SOLAR ELEMENTS IN STUDYING DEPENDENCE ON EXTERNAL FORCES
N.Y. Sharibaev, A.K. Ergashov, R.N. Sharifbaev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
Planning and improvement work has been done to create a mobile device that will increase the efficiency and speed of work when using experiments on low-power solar energy and sensitive photocells. (TiO2) was selected to…
- POSSIBILITIES OF NANOTECHNOLOGY IN SOLAR ENERGY
E. Z. Imamov, R.A. Muminov, R. Rakhimov, Temur Asfandiyarovich Djalalov, Aziz E. Imamov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
The development of applied aspects of the phenomenon of self - organization in solving the problem of improving the efficiency of solar converters is considered. It is proved that the creation of self -organized nano…
- INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS
Sharifa B. Utamuradova, D. A. Rakhmanov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using…
- TYPE OF EXCESS CURRENT GENERATED IN TUNNEL DIODES AND BARRIER TRANSPARENCY COEFFICIENT (TRANSFER COEFFICIENT) IN DIFFERENT MODELS
G. Gulyamov, M.G. Dadamirzayev, Munira K. Uktamova · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
In this work, the transparency coefficient of the barrier formed in a tunnel diode was investigated by adding it as a variable in the Tsu - Esaki model. Also, the excess current generated in the tunnel diode was…
- FEATURES OF LOADING CHARACTERISTICS OF THE CIGS PHOTOELECTRIC MODULE WHEN OPERATING ON THE SURFACE OF THE LAW
F. A. Akbarov, R. R. Kabulov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
The study o f the load current-voltage characteristics o f a solar photovoltaic module based on a polycrystalline semiconductor binary compound Cu (In, Ga) Se 2 under normal sunlight Prad = (800 ± 5) W/m2, in a…
- DIGITAL MODELLING OF OPTIMIZATION PROCESS OF ANTIREFLECTION COVERING FOR SILICON SOLAR CELLS
S.S. Nasriddinov, M.A. Mujdinova · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
Results o f research o f influence o f single mono- and multilayered antireflection coverings on optical characteristics of silicon are discussed. Results received by program system "PVlighthouse" with the appendix…
- INFLUENCE OF YTTERBIUM IMPURITY ON THE GENERATION CHARACTERISTICS OF MDP STRUCTURES
Sharifa B. Utamuradova, Sh.Kh. Daliyev, Mansur B. Bekmuratov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
The influence o f ytterbium atoms on the electrophysical properties o f silicon MIS- structures is investigated by means o f CC-DLTS and high-frequency volt- faradic characteristics. It is shown that the presence o f…
- СА L С UL А TI О N О F THE TEMPER А TURE DEPENDEN С E О F THE О S С ILL А TI О N О F THE DENSITY О F ST А TES IN А QU А NTIZING M А GNETI С FIELD DUE T О THE СО LLISI О N О F ELE С TR О NS О N С RYST А L L А TTI С E DEFE С TS
U . I . Erkaboev, N . A . Sayidov, R. G. Rakhimov, U . M . Negmatov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
А new methоd is prоpоsed fоr саlсulаting the temperаture dependenсe оf the оsсillаtiоns оf the density оf stаtes in а quаntizing mаgnetiс field due tо the соllisiоn оf eleсtrоns оn сrystаl lаttiсe defeсts. Аn аnаlytiсаl…
- CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS
Р. Х. Хамидов, O.O. Mamatkarimov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with…
- STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES
M.Yu. Tashmetov, Sh. Makhkamov, A.R. Sattiev, M.N. Erdonov, Sh. A. Makhmudov, Kh. M. Kholmedov, Tashkent Al - Khwarizmi Uni versity of Information Technologies, Tashkent, Uzbekista · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
The results of a capacitive spectrometric study of the formation of radiation - defect complexes in diffusion silicon p + - n - n + structures under the action of 18.7 MeV protons are presented. It was found that for…
- ABOUT THE CHARACTERISTICS OF MULTILAYER THIN-FILM STRUCTURES WITH DYES BASED ON TITANIUM DIOXIDE
O. Mamatkarimov, A. Abdukarimov, B. Uktamaliev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
Polyethylene oxide (PEO) gel polymer electrolytes (GPEs) were prepared using tetrapropylammonium iodide (TPAI). The mass fracti on (TPAI) in the electrolyte was varied to increase the productivity of the solar cell. It…
- EXPONENTIAL ABSORPTION SPECTRUM AND DENSITY DISTRIBUTION OF ELECTRONIC STATES ON THE TAIL OF THE VALENCE ZONE OF AMORPHOUS SEMICONDUCTORS
O.O. Mamatkarimov, Р. Г. Икрамов, B.H. Kuchkarov, Kh.A. Muminov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The analytical expression of the spectrum, derived for the region of exponential absorption of amorphous semiconductors, is investi gated. The parameters in this expression that determine the slope of the tails of the…
- THEORETICAL PREDICTIONS AND PREP ARATION OF SEMICONDUCTOR SOLIDS BASED ON A STATISTICAL GENERALIZED MOMENT
N.Z. Khakimov, A.Sh. Razzokov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The article presents an analytical formula, theoretical results and calculations of statistically generalized moments of the elements of Mendeleev's peri odic table. For the elements of the periodic table, the results…
- IMPROVEMENT OF OPTICAL PROPER TIES OF HIGH VOLTAGE MATRIX PHOTOELECTRIC DEVICES
S.S. Nasriddinov, O.F. Tukfatullin, M.A. Muydinova, M. Fozilova · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
n this paper a new design of a silicon high-v oltage matrix photovoltaic device with vertical heterojunctions with the Si/ZnO structur e was considered, the optical properties of which are improved
- SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES
nstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, E.M. Naurzalieva · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer…
- MANUFACTURING TECHNOLOGY FOR TWO-COORDINATE SENSITIVE SEMICONDUCTOR DETECTORS BASED ON LARGE-DIAMETER SINGLE-CRYSTAL SILICON
R.A. Muminov, A.K. Saymbetov, Y.Q. Toshmurodov, M.O. Yavqochliyev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
The article presents the main results o f the manufacturing technology o f Si(Li) two- coordinate sensitive nuclear radiation detectors based on single-crystal silicon with the dimensions o f the numerical region 50*50…
- INJECTION DIFFUSION PROCESSES IN THE WEAK LINEAR GRADED-BAND SEMICONDUCTOR ^-«-STRUCTURES
A. Yu. Leĭderman, А. С. Саидов, Sh. N. Usmonov, J. M. Abdiyev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
Processes o f current transport in p-n- structure obtained on the base o f linear graded-band semiconductor are researched. Principal equation at conditions o f quasielectricalfields for electrons and holes was…
- DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si
S.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, D.Kh. Mamazhonova · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity…
- CYCLOTRON TRANSITIONS AND ELECTRON MASS IN A WIDE INAS QUANTUM WELL IN STRONG MAGNETIC FIELDS
G. Gulyamov, P.J. Baymatov, B. T. Abdulazizov, M.S. Tokhirjonov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into…
- EFFECT OF у- IRRADIATION ON THE OPTICAL PROPERTIES OF ZnSe/ZnCdSe QUANTUM-DIMENSIONAL STRUCTURES
M.B. Sharibaev, Q.A. Ismailov, I.N. Karimov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
In this paper, we studied the effect o f Co60 gamma-ray irradiation on the optical characteristics o f single and several compressed-stressed CdxZm-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam…
- EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR
Sh.Kh. Daliev, F.A. Saparov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the…
- Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Ш.Б. Утамурадова, Ж.Ж. Ҳамдамов, Д.А. Рахманов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
- ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES
V.B. Odzhaev, A.N. Petlitsky, V.S. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V.Yu. Yavid, Yu. N. Yankovsky, G. Kh. Mavlyanov, B.K. Ismaylov, Z.T Kenzhaev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for…
- SIMULATION OF THE TEMPERATURE DEPENDENCE OF THE QUANTUM OSCILLATIONS’ EFFECTS IN 2D SEMICONDUCTOR MATERIALS
У. И. Эркабоев, R. G. Rakhimov, N. A. Sayidov, U.M. Negmatov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
For the first time, a mathematical model was developed for determining the effect o f temperature and a quantizing magnetic field on oscillations o f the Fermi energy in nanoscale semiconductor structures with a…
- In the footsteps of the travels of the great genius
Dilorom Salohi · Infolib · 2021-12-30
The article presents opinions on the arrival in the middle of the ХУ century in the city of Samarkand of the great poet and statesman Alisher Navai. Historical facts concerning the life and work of the poet in this city…