The article presents the main results o f the manufacturing technology o f Si(Li) two- coordinate sensitive nuclear radiation detectors based on single-crystal silicon with the dimensions o f the numerical region 50*50 mm and with eight current-collecting bands o f 1.5 mm
| Mualliflar | R.A. Muminov, A.K. Saymbetov, Y.Q. Toshmurodov, M.O. Yavqochliyev |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-02-28 |
| Jild | 3 |
| Son | 1 |
| Betlar | 27-30 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-1-4 |
DOI: 10.37681/2181-1652-019-x-2021-1-4 · Maqolaning asl sahifasi
The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer…
Processes o f current transport in p-n- structure obtained on the base o f linear graded-band semiconductor are researched. Principal equation at conditions o f quasielectricalfields for electrons and holes was…
n this paper a new design of a silicon high-v oltage matrix photovoltaic device with vertical heterojunctions with the Si/ZnO structur e was considered, the optical properties of which are improved
The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity…
The article presents an analytical formula, theoretical results and calculations of statistically generalized moments of the elements of Mendeleev's peri odic table. For the elements of the periodic table, the results…
The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into…
The analytical expression of the spectrum, derived for the region of exponential absorption of amorphous semiconductors, is investi gated. The parameters in this expression that determine the slope of the tails of the…
In this paper, we studied the effect o f Co60 gamma-ray irradiation on the optical characteristics o f single and several compressed-stressed CdxZm-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam…
Polyethylene oxide (PEO) gel polymer electrolytes (GPEs) were prepared using tetrapropylammonium iodide (TPAI). The mass fracti on (TPAI) in the electrolyte was varied to increase the productivity of the solar cell. It…
The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the…
(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — barcha maqolalar