The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution o f Ni atoms and some technological impurities such as Fe and Cr over the volume o f multilayer microinclusions was revealed, according to which the maximum percentage o f impurity atoms is in its central part.
| Mualliflar | S.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, D.Kh. Mamazhonova |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-02-28 |
| Jild | 3 |
| Son | 1 |
| Betlar | 10-15 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-1-1 |
DOI: 10.37681/2181-1652-019-x-2021-1-1 · Maqolaning asl sahifasi
Processes o f current transport in p-n- structure obtained on the base o f linear graded-band semiconductor are researched. Principal equation at conditions o f quasielectricalfields for electrons and holes was…
The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into…
The article presents the main results o f the manufacturing technology o f Si(Li) two- coordinate sensitive nuclear radiation detectors based on single-crystal silicon with the dimensions o f the numerical region 50*50…
In this paper, we studied the effect o f Co60 gamma-ray irradiation on the optical characteristics o f single and several compressed-stressed CdxZm-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam…
The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer…
The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the…
n this paper a new design of a silicon high-v oltage matrix photovoltaic device with vertical heterojunctions with the Si/ZnO structur e was considered, the optical properties of which are improved
Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
The article presents an analytical formula, theoretical results and calculations of statistically generalized moments of the elements of Mendeleev's peri odic table. For the elements of the periodic table, the results…
t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for…
(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — barcha maqolalar