Distribution of impurity atoms by the volume of microincutions in samples n-Si

S.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, D.Kh. Mamazhonova

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution o f Ni atoms and some technological impurities such as Fe and Cr over the volume o f multilayer microinclusions was revealed, according to which the maximum percentage o f impurity atoms is in its central part.

Maqola ma’lumotlari
MualliflarS.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, D.Kh. Mamazhonova
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-02-28
Jild3
Son1
Betlar10-15
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-1-1
Indeksga qo‘shilgan2026-09-02

DOI: 10.37681/2181-1652-019-x-2021-1-1 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAS.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, & D.Kh. Mamazhonova (2021). DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(1), 10-15. https://doi.org/10.37681/2181-1652-019-x-2021-1-1
GOST (OAK)S.Z. Zainabidinov va b. DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 1. – P. 10-15. – DOI: 10.37681/2181-1652-019-x-2021-1-1.
MLAS.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, and D.Kh. Mamazhonova. “DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(1), 10-15, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-1-1
ChicagoS.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, and D.Kh. Mamazhonova. “DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(1), 10-15 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-1-1
HarvardS.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, and D.Kh. Mamazhonova (2021) ‘DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(1), 10-15. https://doi.org/10.37681/2181-1652-019-x-2021-1-1
BibTeX
@article{szzainabidinov2021,
  title = {DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si},
  author = {S.Z. Zainabidinov and N. A. Turgunov and Sh. Akbarov and E.Kh. Berkinov and D.Kh. Mamazhonova},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {1},
  pages = {10-15},
  doi = {10.37681/2181-1652-019-x-2021-1-1},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-1-1}
}

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