Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
| Mualliflar | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Ш.Б. Утамурадова, Ж.Ж. Ҳамдамов, Д.А. Рахманов |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-12-30 |
| Jild | 3 |
| Son | 6 |
| Betlar | 5-10 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-6-2 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-6-2 · Maqolaning asl sahifasi
| APA | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Ш.Б. Утамурадова, Ж.Ж. Ҳамдамов, & Д.А. Рахманов (2021). Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(6), 5-10. https://doi.org/10.37681/2181-1652-019-x-2021-6-2 |
|---|---|
| GOST (OAK) | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK va b. Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 6. – P. 5-10. – DOI: 10.37681/2181-1652-019-x-2021-6-2. |
| MLA | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Ш.Б. Утамурадова, Ж.Ж. Ҳамдамов, and Д.А. Рахманов. “Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(6), 5-10, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-6-2 |
| Chicago | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Ш.Б. Утамурадова, Ж.Ж. Ҳамдамов, and Д.А. Рахманов. “Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(6), 5-10 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-6-2 |
| Harvard | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Ш.Б. Утамурадова, Ж.Ж. Ҳамдамов, and Д.А. Рахманов (2021) ‘Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(6), 5-10. https://doi.org/10.37681/2181-1652-019-x-2021-6-2 |
| BibTeX | @article{sriofphysicsofsemiconductorsandmicroelectronicsatnuuznamedaftermirzoulugbek2021,
title = {Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si},
author = {SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK and Ш.Б. Утамурадова and Ж.Ж. Ҳамдамов and Д.А. Рахманов},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {6},
pages = {5-10},
doi = {10.37681/2181-1652-019-x-2021-6-2},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-6-2}
} |
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