The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer
| Mualliflar | Sh.Kh. Daliev, F.A. Saparov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-04-30 |
| Jild | 3 |
| Son | 2 |
| Betlar | 25-28 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-2-4 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-2-4 · Maqolaning asl sahifasi
| APA | Sh.Kh. Daliev, & F.A. Saparov (2021). EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 25-28. https://doi.org/10.37681/2181-1652-019-x-2021-2-4 |
|---|---|
| GOST (OAK) | Sh.Kh. Daliev, F.A. Saparov EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 2. – P. 25-28. – DOI: 10.37681/2181-1652-019-x-2021-2-4. |
| MLA | Sh.Kh. Daliev, and F.A. Saparov. “EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 25-28, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-2-4 |
| Chicago | Sh.Kh. Daliev, and F.A. Saparov. “EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 25-28 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-2-4 |
| Harvard | Sh.Kh. Daliev, and F.A. Saparov (2021) ‘EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 25-28. https://doi.org/10.37681/2181-1652-019-x-2021-2-4 |
| BibTeX | @article{shkhdaliev2021,
title = {EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR},
author = {Sh.Kh. Daliev and F.A. Saparov},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {2},
pages = {25-28},
doi = {10.37681/2181-1652-019-x-2021-2-4},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-2-4}
} |
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