The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer
| Mualliflar | Sh.Kh. Daliev, F.A. Saparov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-04-30 |
| Jild | 3 |
| Son | 2 |
| Betlar | 25-28 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-2-4 |
DOI: 10.37681/2181-1652-019-x-2021-2-4 · Maqolaning asl sahifasi
In this paper, we studied the effect o f Co60 gamma-ray irradiation on the optical characteristics o f single and several compressed-stressed CdxZm-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam…
Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into…
t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for…
The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity…
For the first time, a mathematical model was developed for determining the effect o f temperature and a quantizing magnetic field on oscillations o f the Fermi energy in nanoscale semiconductor structures with a…
Processes o f current transport in p-n- structure obtained on the base o f linear graded-band semiconductor are researched. Principal equation at conditions o f quasielectricalfields for electrons and holes was…
The article presents the main results o f the manufacturing technology o f Si(Li) two- coordinate sensitive nuclear radiation detectors based on single-crystal silicon with the dimensions o f the numerical region 50*50…
The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer…
n this paper a new design of a silicon high-v oltage matrix photovoltaic device with vertical heterojunctions with the Si/ZnO structur e was considered, the optical properties of which are improved
(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — barcha maqolalar