t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for changing the environment
| Mualliflar | V.B. Odzhaev, A.N. Petlitsky, V.S. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V.Yu. Yavid, Yu. N. Yankovsky, G. Kh. Mavlyanov, B.K. Ismaylov, Z.T Kenzhaev |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-04-30 |
| Jild | 3 |
| Son | 2 |
| Betlar | 35-40 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-2-6 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-2-6 · Maqolaning asl sahifasi
| APA | V.B. Odzhaev, A.N. Petlitsky, V.S. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V.Yu. Yavid, Yu. N. Yankovsky, G. Kh. Mavlyanov, B.K. Ismaylov, & Z.T Kenzhaev (2021). ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 35-40. https://doi.org/10.37681/2181-1652-019-x-2021-2-6 |
|---|---|
| GOST (OAK) | V.B. Odzhaev va b. ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 2. – P. 35-40. – DOI: 10.37681/2181-1652-019-x-2021-2-6. |
| MLA | V.B. Odzhaev, A.N. Petlitsky, V.S. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V.Yu. Yavid, Yu. N. Yankovsky, G. Kh. Mavlyanov, B.K. Ismaylov, and Z.T Kenzhaev. “ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 35-40, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-2-6 |
| Chicago | V.B. Odzhaev, A.N. Petlitsky, V.S. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V.Yu. Yavid, Yu. N. Yankovsky, G. Kh. Mavlyanov, B.K. Ismaylov, and Z.T Kenzhaev. “ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 35-40 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-2-6 |
| Harvard | V.B. Odzhaev, A.N. Petlitsky, V.S. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V.Yu. Yavid, Yu. N. Yankovsky, G. Kh. Mavlyanov, B.K. Ismaylov, and Z.T Kenzhaev (2021) ‘ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 35-40. https://doi.org/10.37681/2181-1652-019-x-2021-2-6 |
| BibTeX | @article{vbodzhaev2021,
title = {ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES},
author = {V.B. Odzhaev and A.N. Petlitsky and V.S. Prosolovich and V. A. Filipenya and D. V. Shestovsky and V.Yu. Yavid and Yu. N. Yankovsky and G. Kh. Mavlyanov and B.K. Ismaylov and Z.T Kenzhaev},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {2},
pages = {35-40},
doi = {10.37681/2181-1652-019-x-2021-2-6},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-2-6}
} |
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