The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer charge , total charge of semiconductor, inversion layer width and SCR semiconductor total width were m ade. Also, dependence theses quantities from doping level, temperature and surface potential were obtained
| Mualliflar | nstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, E.M. Naurzalieva |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-04-30 |
| Jild | 3 |
| Son | 2 |
| Betlar | 41-46 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-2-7 |
DOI: 10.37681/2181-1652-019-x-2021-2-7 · Maqolaning asl sahifasi
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(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — barcha maqolalar