Simulation of potential distributions in the space charge region of semiconductor structures

nstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, E.M. Naurzalieva

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer charge , total charge of semiconductor, inversion layer width and SCR semiconductor total width were m ade. Also, dependence theses quantities from doping level, temperature and surface potential were obtained

Maqola ma’lumotlari
Mualliflarnstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, E.M. Naurzalieva
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-04-30
Jild3
Son2
Betlar41-46
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-2-7
Indeksga qo‘shilgan2026-09-02

DOI: 10.37681/2181-1652-019-x-2021-2-7 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAnstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, & E.M. Naurzalieva (2021). SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 41-46. https://doi.org/10.37681/2181-1652-019-x-2021-2-7
GOST (OAK)nstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, E.M. Naurzalieva SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 2. – P. 41-46. – DOI: 10.37681/2181-1652-019-x-2021-2-7.
MLAnstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, and E.M. Naurzalieva. “SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 41-46, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-2-7
Chicagonstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, and E.M. Naurzalieva. “SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 41-46 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-2-7
Harvardnstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, and E.M. Naurzalieva (2021) ‘SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 41-46. https://doi.org/10.37681/2181-1652-019-x-2021-2-7
BibTeX
@article{nstituteofsemiconductorphysicsandmicroelectronicsofnuuztashkentuzbekistan2021,
  title = {SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES},
  author = {nstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan and Sharifa B. Utamuradova and E.M. Naurzalieva},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {2},
  pages = {41-46},
  doi = {10.37681/2181-1652-019-x-2021-2-7},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-2-7}
}

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