The results of a capacitive spectrometric study of the formation of radiation - defect complexes in diffusion silicon p + - n - n + structures under the action of 18.7 MeV protons are presented. It was found that for the A center after irradiation, the efficiency of RD formation in diffusion diodes with shallow depths of the p + layer has a nonmonotonic dependence and constitutes the main RD concentration. A mechanism is considered that explains the effect of the p + - layer depth in diffusion diodes on the defect formation process.
| Mualliflar | M.Yu. Tashmetov, Sh. Makhkamov, A.R. Sattiev, M.N. Erdonov, Sh. A. Makhmudov, Kh. M. Kholmedov, Tashkent Al - Khwarizmi Uni versity of Information Technologies, Tashkent, Uzbekistan |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-06-30 |
| Jild | 3 |
| Son | 3 |
| Betlar | 45-50 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-3-8 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-3-8 · Maqolaning asl sahifasi
| APA | M.Yu. Tashmetov, Sh. Makhkamov, A.R. Sattiev, M.N. Erdonov, Sh. A. Makhmudov, Kh. M. Kholmedov, & Tashkent Al - Khwarizmi Uni versity of Information Technologies, Tashkent, Uzbekistan (2021). STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 45-50. https://doi.org/10.37681/2181-1652-019-x-2021-3-8 |
|---|---|
| GOST (OAK) | M.Yu. Tashmetov va b. STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 3. – P. 45-50. – DOI: 10.37681/2181-1652-019-x-2021-3-8. |
| MLA | M.Yu. Tashmetov, Sh. Makhkamov, A.R. Sattiev, M.N. Erdonov, Sh. A. Makhmudov, Kh. M. Kholmedov, and Tashkent Al - Khwarizmi Uni versity of Information Technologies, Tashkent, Uzbekistan. “STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 45-50, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-3-8 |
| Chicago | M.Yu. Tashmetov, Sh. Makhkamov, A.R. Sattiev, M.N. Erdonov, Sh. A. Makhmudov, Kh. M. Kholmedov, and Tashkent Al - Khwarizmi Uni versity of Information Technologies, Tashkent, Uzbekistan. “STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 45-50 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-3-8 |
| Harvard | M.Yu. Tashmetov, Sh. Makhkamov, A.R. Sattiev, M.N. Erdonov, Sh. A. Makhmudov, Kh. M. Kholmedov, and Tashkent Al - Khwarizmi Uni versity of Information Technologies, Tashkent, Uzbekistan (2021) ‘STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 45-50. https://doi.org/10.37681/2181-1652-019-x-2021-3-8 |
| BibTeX | @article{myutashmetov2021,
title = {STUDY OF THE INFLUENCE OF PROTON RADIATION ON THE FORMATION OF RADIATION DEFECTS IN DIFFUSION SILICON DIODES},
author = {M.Yu. Tashmetov and Sh. Makhkamov and A.R. Sattiev and M.N. Erdonov and Sh. A. Makhmudov and Kh. M. Kholmedov and Tashkent Al - Khwarizmi Uni versity of Information Technologies, Tashkent, Uzbekistan},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {3},
pages = {45-50},
doi = {10.37681/2181-1652-019-x-2021-3-8},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-3-8}
} |
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