The results of a capacitive spectrometric study of the formation of radiation - defect complexes in diffusion silicon p + - n - n + structures under the action of 18.7 MeV protons are presented. It was found that for the A center after irradiation, the efficiency of RD formation in diffusion diodes with shallow depths of the p + layer has a nonmonotonic dependence and constitutes the main RD concentration. A mechanism is considered that explains the effect of the p + - layer depth in diffusion diodes on the defect fo rmation process.
| Mualliflar | M.Yu. Tashmetov, Sh. Makhkamov, A.R. Sattiev, M.N. Erdonov, Sh. A. Makhmudov, Kh. M. Kholmedov, Tashkent Al - Khwarizmi Uni versity of Information Technologies, Tashkent, Uzbekistan |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-06-30 |
| Jild | 3 |
| Son | 3 |
| Betlar | 45-50 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-3-8 |
DOI: 10.37681/2181-1652-019-x-2021-3-8 · Maqolaning asl sahifasi
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