Calculation of components of deformation sensitivity of silicon samples with deep impurity levels

Р. Х. Хамидов, O.O. Mamatkarimov

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with ampho teric impurities, almost does not have static components of strain sensitivity at pulse hydrostati c pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects

Maqola ma’lumotlari
MualliflarР. Х. Хамидов, O.O. Mamatkarimov
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-08-30
Jild3
Son4
Betlar48-52
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-4-8
Indeksga qo‘shilgan2026-09-02

DOI: 10.37681/2181-1652-019-x-2021-4-8 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAР. Х. Хамидов, & O.O. Mamatkarimov (2021). CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(4), 48-52. https://doi.org/10.37681/2181-1652-019-x-2021-4-8
GOST (OAK)Р. Х. Хамидов, O.O. Mamatkarimov CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 4. – P. 48-52. – DOI: 10.37681/2181-1652-019-x-2021-4-8.
MLAР. Х. Хамидов, and O.O. Mamatkarimov. “CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(4), 48-52, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-4-8
ChicagoР. Х. Хамидов, and O.O. Mamatkarimov. “CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(4), 48-52 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-4-8
HarvardР. Х. Хамидов, and O.O. Mamatkarimov (2021) ‘CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(4), 48-52. https://doi.org/10.37681/2181-1652-019-x-2021-4-8
BibTeX
@article{article2021,
  title = {CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS},
  author = {Р. Х. Хамидов and O.O. Mamatkarimov},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {4},
  pages = {48-52},
  doi = {10.37681/2181-1652-019-x-2021-4-8},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-4-8}
}

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