In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with ampho teric impurities, almost does not have static components of strain sensitivity at pulse hydrostati c pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects
| Mualliflar | Р. Х. Хамидов, O.O. Mamatkarimov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-08-30 |
| Jild | 3 |
| Son | 4 |
| Betlar | 48-52 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-4-8 |
DOI: 10.37681/2181-1652-019-x-2021-4-8 · Maqolaning asl sahifasi
А new methоd is prоpоsed fоr саlсulаting the temperаture dependenсe оf the оsсillаtiоns оf the density оf stаtes in а quаntizing mаgnetiс field due tо the соllisiоn оf eleсtrоns оn сrystаl lаttiсe defeсts. Аn аnаlytiсаl…
The results of a capacitive spectrometric study of the formation of radiation - defect complexes in diffusion silicon p + - n - n + structures under the action of 18.7 MeV protons are presented. It was found that for…
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(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — barcha maqolalar