CALCULATION OF COMPONENTS OF DEFORMATION SENSITIVITY OF SILICON SAMPLES WITH DEEP IMPURITY LEVELS

Р. Х. Хамидов, O.O. Mamatkarimov

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with ampho teric impurities, almost does not have static components of strain sensitivity at pulse hydrostati c pressure. In such samples, the strain sensitivity is related only to the temperature and relaxation effects

Maqola ma’lumotlari
MualliflarР. Х. Хамидов, O.O. Mamatkarimov
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
Nashr sanasi2021-08-30
Jild3
Son4
Betlar48-52
Tilen
DOI10.37681/2181-1652-019-x-2021-4-8

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