In this work, the transparency coefficient of the barrier formed in a tunnel diode was investigated by adding it as a variable in the Tsu - Esaki model. Also, the excess current generated in the tunnel diode was analyzed with the Chynowez model, based on th e theory of Knott and Demass. Based on the Franz -Keldesh model for various values of the electric field, the current - voltage characteristic of the tunnel diode was obtained from the change in the excess current of the tunnel diode
| Mualliflar | G. Gulyamov, M.G. Dadamirzayev, Munira K. Uktamova |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-06-30 |
| Jild | 3 |
| Son | 3 |
| Betlar | 27-33 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-3-5 |
DOI: 10.37681/2181-1652-019-x-2021-3-5 · Maqolaning asl sahifasi
The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using…
The study o f the load current-voltage characteristics o f a solar photovoltaic module based on a polycrystalline semiconductor binary compound Cu (In, Ga) Se 2 under normal sunlight Prad = (800 ± 5) W/m2, in a…
The development of applied aspects of the phenomenon of self - organization in solving the problem of improving the efficiency of solar converters is considered. It is proved that the creation of self -organized nano…
Results o f research o f influence o f single mono- and multilayered antireflection coverings on optical characteristics of silicon are discussed. Results received by program system "PVlighthouse" with the appendix…
Planning and improvement work has been done to create a mobile device that will increase the efficiency and speed of work when using experiments on low-power solar energy and sensitive photocells. (TiO2) was selected to…
The influence o f ytterbium atoms on the electrophysical properties o f silicon MIS- structures is investigated by means o f CC-DLTS and high-frequency volt- faradic characteristics. It is shown that the presence o f…
DETERMIN А TI О N О F DEPENDENCE О F THE B АА new meth о d is pr о p о sed f о r c а lcul а ting the b а nd g а p in semic о nduct о rs t а king int о а cc о unt l а ttice vibr а ti о ns а nd therm а l sme а ring under…
А new methоd is prоpоsed fоr саlсulаting the temperаture dependenсe оf the оsсillаtiоns оf the density оf stаtes in а quаntizing mаgnetiс field due tо the соllisiоn оf eleсtrоns оn сrystаl lаttiсe defeсts. Аn аnаlytiсаl…
The temperature dependence of the energy spectrum of semiconductors is well explained by the thermal broadening of discrete en ergy spectra. The temperature dependence of the band gap is considered as broadening of the…
In this paper presents that samples of sili con with acceptor impurities have a greater static and lower dynamic strain sensitivity than silicon samples with donor and amphoteric impurities. And samples of silicon with…
(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — barcha maqolalar