The influence o f ytterbium atoms on the electrophysical properties o f silicon MIS- structures is investigated by means o f CC-DLTS and high-frequency volt- faradic characteristics. It is shown that the presence o f ytterbium atoms in the volume o f the silicon substrate leads to a decrease in the density o f surface states o f MIS - structures. It is found that the presence o f Yb atoms in the substrate does not lead to noticeable changes in the density distribution o f surface states o f Nss over the width o f the band gap Eg
| Mualliflar | Sharifa B. Utamuradova, Sh.Kh. Daliyev, Mansur B. Bekmuratov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-02-28 |
| Jild | 3 |
| Son | 1 |
| Betlar | 16-19 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-1-2 |
DOI: 10.37681/2181-1652-019-x-2021-1-2 · Maqolaning asl sahifasi
Results o f research o f influence o f single mono- and multilayered antireflection coverings on optical characteristics of silicon are discussed. Results received by program system "PVlighthouse" with the appendix…
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(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — barcha maqolalar