The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using the methods of deep level transient spectroscopy (DLTS).
| Mualliflar | Sharifa B. Utamuradova, D. A. Rakhmanov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-06-30 |
| Jild | 3 |
| Son | 3 |
| Betlar | 18-20 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-3-3 |
DOI: 10.37681/2181-1652-019-x-2021-3-3 · Maqolaning asl sahifasi
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