Influence of technological impurities on the formation of radiation defects in silicon with transition elements

Sharifa B. Utamuradova, D. A. Rakhmanov

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

The purpose of this work is to study the influence of the content of growth impurities (oxygen and carbon) on the formation of radiation defects (RD) in Si with transition elements irradiated with 60Co γ-quanta using the methods of deep level transient spectroscopy (DLTS).

Maqola ma’lumotlari
MualliflarSharifa B. Utamuradova, D. A. Rakhmanov
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-06-30
Jild3
Son3
Betlar18-20
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-3-3
Indeksga qo‘shilgan2026-09-02

DOI: 10.37681/2181-1652-019-x-2021-3-3 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APASharifa B. Utamuradova, & D. A. Rakhmanov (2021). INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 18-20. https://doi.org/10.37681/2181-1652-019-x-2021-3-3
GOST (OAK)Sharifa B. Utamuradova, D. A. Rakhmanov INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 3. – P. 18-20. – DOI: 10.37681/2181-1652-019-x-2021-3-3.
MLASharifa B. Utamuradova, and D. A. Rakhmanov. “INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 18-20, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-3-3
ChicagoSharifa B. Utamuradova, and D. A. Rakhmanov. “INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 18-20 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-3-3
HarvardSharifa B. Utamuradova, and D. A. Rakhmanov (2021) ‘INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 18-20. https://doi.org/10.37681/2181-1652-019-x-2021-3-3
BibTeX
@article{sharifabutamuradova2021,
  title = {INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE FORMATION OF RADIATION DEFECTS IN SILICON WITH TRANSITION ELEMENTS},
  author = {Sharifa B. Utamuradova and D. A. Rakhmanov},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {3},
  pages = {18-20},
  doi = {10.37681/2181-1652-019-x-2021-3-3},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-3-3}
}

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