the method of digital modelling investigates influence of temperature on photo- electric processes in silicon solar cells. Feat ure of program system “Sentaurus TCAD” which allowed to model silicon solar cells with flat p- n-junction is described. Are calculated of the I-V characteristic of the solar cells containing platin um nanoparticles and without them at a variation of temperature in a range 250÷350 K. Sizes of the basic photo -electric parameters of solar cells for various values of temperature are defined
| Mualliflar | R. Aliev, J. Ziyoitdinov, Jasurbek Gulomov, M. Abduvohidov, B. Urmanov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-04-30 |
| Jild | 3 |
| Son | 2 |
| Betlar | 57-63 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-2-10 |
DOI: 10.37681/2181-1652-019-x-2021-2-10 · Maqolaning asl sahifasi
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