In this study, using the method of electron probe analysis, the sequence of formation of various impurity precipitates of nickel in silicon in the process of diffusion doping at a temperature of T = 1573 K was investigated. The influence of the value of the cooling rate of the samples after diffusion annealing on the formation of impurity precipitates was considered. The morphological parameters of impurity precipitates of nickel in silicon have been revealed, and their chemical compositions have been determined. It was found that, depending on the size and shape, the nickel precipitates can have a single or multilayer structure
| Mualliflar | S. Z. Zaynabidinov, N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-06-30 |
| Jild | 3 |
| Son | 3 |
| Betlar | 8-12 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-3-1 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-3-1 · Maqolaning asl sahifasi
| APA | S. Z. Zaynabidinov, N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, & nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan (2021). STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 8-12. https://doi.org/10.37681/2181-1652-019-x-2021-3-1 |
|---|---|
| GOST (OAK) | S. Z. Zaynabidinov va b. STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 3. – P. 8-12. – DOI: 10.37681/2181-1652-019-x-2021-3-1. |
| MLA | S. Z. Zaynabidinov, N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, and nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan. “STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 8-12, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-3-1 |
| Chicago | S. Z. Zaynabidinov, N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, and nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan. “STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 8-12 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-3-1 |
| Harvard | S. Z. Zaynabidinov, N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, and nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan (2021) ‘STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 8-12. https://doi.org/10.37681/2181-1652-019-x-2021-3-1 |
| BibTeX | @article{szzaynabidinov2021,
title = {STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON},
author = {S. Z. Zaynabidinov and N. A. Turgunov and E.Kh. Berkinov and R.M. Turmanova and nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {3},
pages = {8-12},
doi = {10.37681/2181-1652-019-x-2021-3-1},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-3-1}
} |
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