STRUCTURE FORMATION OF IMPURITY PRECIPITES NICKEL IN SILICON

S. Z. Zaynabidinov, N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

In this study, using the method of electron probe analysis, the sequence of formation of various impurity precipitates of nickel in silicon in the process of diffusion doping at a temperature of T = 1573 K was investigated. The influence of the value of the cooling rate of the samples after diffusion annealing on the formation of impurity precipitates was considered. The morphological parameters of impurity precipitates of nickel in silicon have been revealed, and their chemical compositions have been determined. It was found that, depending on the size and shape, the nickel precipitates can have a single or multilayer structure

Maqola ma’lumotlari
MualliflarS. Z. Zaynabidinov, N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova, nstitute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, 100057. Uzbekistan
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
Nashr sanasi2021-06-30
Jild3
Son3
Betlar8-12
Tilen
DOI10.37681/2181-1652-019-x-2021-3-1

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