A diffusion technology for doping silicon with impurity atoms of sulfur preventing surface erosion has been developed. The technology could be used to create relevant semiconductor devices. Controlling diffusant vapor pressure, diffusion time and temperatu re, it is possible to obtain silicon samples of both p - type conductivity and n - type doped with impurity atoms of sulfur. The developed technology is recommended for application in obtaining silicon doped with other diffusants, which, during diffusion, stro ngly interact with the original silicon, forming surface erosion
| Mualliflar | N.F. Zikrillaev, М.К. Ha kk ulov, F. K. Shakarov, S.Y. Ma kh mudov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashr sanasi | 2021-06-30 |
| Jild | 3 |
| Son | 3 |
| Betlar | 39-44 |
| Til | en |
| DOI | 10.37681/2181-1652-019-x-2021-3-7 |
DOI: 10.37681/2181-1652-019-x-2021-3-7 · Maqolaning asl sahifasi
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