A diffusion technology for doping silicon with impurity atoms of sulfur preventing surface erosion has been developed. The technology could be used to create relevant semiconductor devices. Controlling diffusant vapor pressure, diffusion time and temperatu re, it is possible to obtain silicon samples of both p - type conductivity and n - type doped with impurity atoms of sulfur. The developed technology is recommended for application in obtaining silicon doped with other diffusants, which, during diffusion, stro ngly interact with the original silicon, forming surface erosion
| Mualliflar | N.F. Zikrillaev, М.К. Ha kk ulov, F. K. Shakarov, S.Y. Ma kh mudov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-06-30 |
| Jild | 3 |
| Son | 3 |
| Betlar | 39-44 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-3-7 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-3-7 · Maqolaning asl sahifasi
| APA | N.F. Zikrillaev, М.К. Ha kk ulov, F. K. Shakarov, & S.Y. Ma kh mudov (2021). TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 39-44. https://doi.org/10.37681/2181-1652-019-x-2021-3-7 |
|---|---|
| GOST (OAK) | N.F. Zikrillaev va b. TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 3. – P. 39-44. – DOI: 10.37681/2181-1652-019-x-2021-3-7. |
| MLA | N.F. Zikrillaev, М.К. Ha kk ulov, F. K. Shakarov, and S.Y. Ma kh mudov. “TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 39-44, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-3-7 |
| Chicago | N.F. Zikrillaev, М.К. Ha kk ulov, F. K. Shakarov, and S.Y. Ma kh mudov. “TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 39-44 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-3-7 |
| Harvard | N.F. Zikrillaev, М.К. Ha kk ulov, F. K. Shakarov, and S.Y. Ma kh mudov (2021) ‘TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 39-44. https://doi.org/10.37681/2181-1652-019-x-2021-3-7 |
| BibTeX | @article{nfzikrillaev2021,
title = {TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR},
author = {N.F. Zikrillaev and М.К. Ha kk ulov and F. K. Shakarov and S.Y. Ma kh mudov},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {3},
pages = {39-44},
doi = {10.37681/2181-1652-019-x-2021-3-7},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-3-7}
} |
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