Effect of ultrahigh frequency fields on the photoelectric characteristics of p-n conducting semiconductor diodes

G. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, F.R. Mukhiddinova

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed

Maqola ma’lumotlari
MualliflarG. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, F.R. Mukhiddinova
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-04-30
Jild3
Son2
Betlar29-34
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-2-5
Indeksga qo‘shilgan2026-09-02

Ilmiy soha

Iqtibos keltirish

APAG. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, & F.R. Mukhiddinova (2021). EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 29-34. https://doi.org/10.37681/2181-1652-019-x-2021-2-5
GOST (OAK)G. Gulyamov va b. EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 2. – P. 29-34. – DOI: 10.37681/2181-1652-019-x-2021-2-5.
MLAG. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, and F.R. Mukhiddinova. “EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 29-34, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-2-5
ChicagoG. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, and F.R. Mukhiddinova. “EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 29-34 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-2-5
HarvardG. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, and F.R. Mukhiddinova (2021) ‘EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 29-34. https://doi.org/10.37681/2181-1652-019-x-2021-2-5
BibTeX
@article{ggulyamov2021,
  title = {EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES},
  author = {G. Gulyamov and B.B. Shakhobiddinov and G.N. Majidova and F.R. Mukhiddinova},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {2},
  pages = {29-34},
  doi = {10.37681/2181-1652-019-x-2021-2-5},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-2-5}
}

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