G. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, F.R. Mukhiddinova
In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed
- STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, З.М. Хусанов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
The current-voltage characteristics of Au-nCdS- nSi-pCdTe-Au at 300 K. It was found that the current-voltage characteristics of such structures has three segments: power-law - I∝V2.44, sublinear V∝exp(Jad), and…
- SELECTION CRITERIA FOR POWER TRANSISTORS OF DC-TO-DC VOLTAGE INVERTER OF STAND-ALONE PHOTOVOLTAIC SYSTEM
O.F. Tukfatullin, R.A. Muminov, K. A. Djumamuratov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
In this paper three criteria for choosing power switches for DC-to-DC converter o f stand-alone photovoltaic system voltage inverter was discussed, that allowed to choose metal oxide semiconductor field-effect…
- THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.А. Корабоев, Д. Т. Якубов, Х.Х. Курбонов, У.К. Сапаев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
- DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS
Branch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, S.M. Otajonov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films…
- INJECTION CURRENTS P-SI–N-SI1-XSNX–N+-SI1-XSNX (0X0.04)-STRUCTURES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, Х.М. Мадаминов, А.Ш. Икромов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
INJECTION CURRENTS P-SI–N-SI1-XSNX–N+-SI1-XSNX (0X0.04)-STRUCTURES
- EFFECTS OF TEMPERATURE AND A TRANSVERSAL QUANTIZING MAGNETIC FIELD ON THE FORBIDDEN BAND OF A QUANTUM WELL
N. А . S а yid о, R.G. R а khim о, J.I. Mirz а ev, U.B. Negmatov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-08-30
This article considers the temperature dependence of the band gap in quantum-well heterostructures in the presence of a transverse quantizing magnetic field. An analytical expression is obtained for determining the band…
- INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Г. Гулямов, М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, М.К. Уктамова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
- METHOD OF PREVENTING CONTAMINATION OF THE SURFACE OF PHOTOVOLTAIC CELLS
B.A. Yuldoshov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The paper considers the mechanisms of pol lution and deposition on the surface of photovoltaic batteries (PVB) in various conditions of the seasons and incidence angles from the degree of surface treatment of…
- THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.Э. Онаркулов, Ш.А. Юлдашев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
- TECHNOLOGICAL METHOD OF ERROSION - FREE DIFFUSION OF SILICON WITH IMPURITY ATOMS OF SULFUR
N.F. Zikrillaev, М.К. Ha kk ulov, F. K. Shakarov, S.Y. Ma kh mudov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-06-30
A diffusion technology for doping silicon with impurity atoms of sulfur preventing surface erosion has been developed. The technology could be used to create relevant semiconductor devices. Controlling diffusant vapor…