Device for studying tenze sensitivity in photosensitive semiconductor films

Branch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, S.M. Otajonov

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it

Maqola ma’lumotlari
MualliflarBranch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, S.M. Otajonov
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-02-28
Jild3
Son1
Betlar31-35
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-1-5
Indeksga qo‘shilgan2026-09-02

Ilmiy soha

Iqtibos keltirish

APABranch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, & S.M. Otajonov (2021). DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(1), 31-35. https://doi.org/10.37681/2181-1652-019-x-2021-1-5
GOST (OAK)Branch o f the Federal State Budgetary Educational Institution o f Higher Education " va b. DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 1. – P. 31-35. – DOI: 10.37681/2181-1652-019-x-2021-1-5.
MLABranch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, and S.M. Otajonov. “DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(1), 31-35, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-1-5
ChicagoBranch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, and S.M. Otajonov. “DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(1), 31-35 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-1-5
HarvardBranch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, and S.M. Otajonov (2021) ‘DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(1), 31-35. https://doi.org/10.37681/2181-1652-019-x-2021-1-5
BibTeX
@article{branchofthefederalstatebudgetaryeducationalinstitutionofhighereducation2021,
  title = {DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS},
  author = {Branch o f the Federal State Budgetary Educational Institution o f Higher Education " and Kh.S. Daliev and MEI" and in Tashkent, Uzbekistan and M.K. Onarkulov and S.M. Otajonov},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {1},
  pages = {31-35},
  doi = {10.37681/2181-1652-019-x-2021-1-5},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-1-5}
}

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