SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, Х.М. Мадаминов, А.Ш. Икромов
- INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Г. Гулямов, М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, М.К. Уктамова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
- THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.А. Корабоев, Д. Т. Якубов, Х.Х. Курбонов, У.К. Сапаев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
- THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.Э. Онаркулов, Ш.А. Юлдашев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
- STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, З.М. Хусанов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
The current-voltage characteristics of Au-nCdS- nSi-pCdTe-Au at 300 K. It was found that the current-voltage characteristics of such structures has three segments: power-law - I∝V2.44, sublinear V∝exp(Jad), and…
- STUDY AND ANALYSIS OF ELECTRICAL PARAMETERS OF SILICON PHOTOELECTRIC BATTERIES FROM VARIOUS TYPES OF SOLAR CELLS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Н. Турсунов, Х. Сабиров, Ш.Н. Абилфайзиев, Б.А. Юлдошов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
STUDY AND ANALYSIS OF ELECTRICAL PARAMETERS OF SILICON PHOTOELECTRIC BATTERIES FROM VARIOUS TYPES OF SOLAR CELLS
- EFFECT OF ULTRAHIGH FREQUENCY FIELDS ON THE PHOTOELECTRIC CHARACTERISTICS OF P-N CONDUCTING SEMICONDUCTOR DIODES
G. Gulyamov, B.B. Shakhobiddinov, G.N. Majidova, F.R. Mukhiddinova · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
In this paper, a mathematical model of the change in the current-voltage characteristics of the p-n junction under the infl uence of light and microwave fields is proposed
- DIGITAL INFRARED HUMIDITY METER OF RAW COTTON IN BUNTS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, Golibzhon Kuldashov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
DIGITAL INFRARED HUMIDITY METER OF RAW COTTON IN BUNTS
- SELECTION CRITERIA FOR POWER TRANSISTORS OF DC-TO-DC VOLTAGE INVERTER OF STAND-ALONE PHOTOVOLTAIC SYSTEM
O.F. Tukfatullin, R.A. Muminov, K. A. Djumamuratov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
In this paper three criteria for choosing power switches for DC-to-DC converter o f stand-alone photovoltaic system voltage inverter was discussed, that allowed to choose metal oxide semiconductor field-effect…
- STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Н.Ф. Зикриллаев, Т. Комилов, А.Ж. Хусанов, К.К Курбоналиев, М.М. Шоабдурахимова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES
- DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS
Branch o f the Federal State Budgetary Educational Institution o f Higher Education ", Kh.S. Daliev, MEI", in Tashkent, Uzbekistan, M.K. Onarkulov, S.M. Otajonov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films…