SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Н. Турсунов, Х. Сабиров, Ш.Н. Абилфайзиев, Б.А. Юлдошов
STUDY AND ANALYSIS OF ELECTRICAL PARAMETERS OF SILICON PHOTOELECTRIC BATTERIES FROM VARIOUS TYPES OF SOLAR CELLS
- DIGITAL INFRARED HUMIDITY METER OF RAW COTTON IN BUNTS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, Golibzhon Kuldashov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
DIGITAL INFRARED HUMIDITY METER OF RAW COTTON IN BUNTS
- THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.Э. Онаркулов, Ш.А. Юлдашев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
- STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Н.Ф. Зикриллаев, Т. Комилов, А.Ж. Хусанов, К.К Курбоналиев, М.М. Шоабдурахимова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES
- INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Г. Гулямов, М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, М.К. Уктамова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
- INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, Ф.А. Сапаров · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES
- INJECTION CURRENTS P-SI–N-SI1-XSNX–N+-SI1-XSNX (0X0.04)-STRUCTURES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, Х.М. Мадаминов, А.Ш. Икромов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
INJECTION CURRENTS P-SI–N-SI1-XSNX–N+-SI1-XSNX (0X0.04)-STRUCTURES
- OPTICAL GAS ANALYZER OF EXPLOSIVE CONCENTRATIONS OF HYDROCARBONS IN THE ATMOSPHERE
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О.Х. Кулдашов, И.О. Холмирзаев, Ш.Э. Муродов, С.Ш. Рашидов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
OPTICAL GAS ANALYZER OF EXPLOSIVE CONCENTRATIONS OF HYDROCARBONS IN THE ATMOSPHERE
- THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.А. Корабоев, Д. Т. Якубов, Х.Х. Курбонов, У.К. Сапаев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
- HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, А.Й. Бобоев, Д.П. Абдурахимов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y
- STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, З.М. Хусанов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
The current-voltage characteristics of Au-nCdS- nSi-pCdTe-Au at 300 K. It was found that the current-voltage characteristics of such structures has three segments: power-law - I∝V2.44, sublinear V∝exp(Jad), and…