STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES

SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, З.М. Хусанов

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

The current-voltage characteristics of Au-nCdS- nSi-pCdTe-Au at 300 K. It was found that the current-voltage characteristics of such structures has three segments: power-law - I∝V2.44, sublinear V∝exp(Jad), and pre-breakdown dependence - I∝V5.55. The concentrations of deep impurities responsible for the appearance of a sublinear section of the current-voltage characteristic. experimental the results are explained on the basis of theoretical ideas about the complex nature recombination processes in such materials.

DOI: 10.37681/2181-1652-019-x-2021-5-1 · Maqolaning asl sahifasi

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали jurnalidan boshqa maqolalar

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  SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, Х.М. Мадаминов, А.Ш. Икромов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30

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• SELECTION CRITERIA FOR POWER TRANSISTORS OF DC-TO-DC VOLTAGE INVERTER OF STAND-ALONE PHOTOVOLTAIC SYSTEM

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• THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER

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• EFFECTS OF TEMPERATURE AND A TRANSVERSAL QUANTIZING MAGNETIC FIELD ON THE FORBIDDEN BAND OF A QUANTUM WELL

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(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — barcha maqolalar