Study of temperature effects in silicon structures with vanadium impurities

SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, З.М. Хусанов

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

The current-voltage characteristics of Au-nCdS- nSi-pCdTe-Au at 300 K. It was found that the current-voltage characteristics of such structures has three segments: power-law - I∝V2.44, sublinear V∝exp(Jad), and pre-breakdown dependence - I∝V5.55. The concentrations of deep impurities responsible for the appearance of a sublinear section of the current-voltage characteristic. experimental the results are explained on the basis of theoretical ideas about the complex nature recombination processes in such materials.

Maqola ma’lumotlari
MualliflarSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, З.М. Хусанов
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-10-30
Jild3
Son5
Betlar1-6
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-5-1
Indeksga qo‘shilgan2026-09-02

DOI: 10.37681/2181-1652-019-x-2021-5-1 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APASRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, & З.М. Хусанов (2021). STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 1-6. https://doi.org/10.37681/2181-1652-019-x-2021-5-1
GOST (OAK)SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, З.М. Хусанов STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 5. – P. 1-6. – DOI: 10.37681/2181-1652-019-x-2021-5-1.
MLASRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, and З.М. Хусанов. “STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 1-6, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-5-1
ChicagoSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, and З.М. Хусанов. “STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 1-6 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-5-1
HarvardSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, and З.М. Хусанов (2021) ‘STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 1-6. https://doi.org/10.37681/2181-1652-019-x-2021-5-1
BibTeX
@article{sriofphysicsofsemiconductorsandmicroelectronicsatnuuznamedaftermirzoulugbek2021,
  title = {STUDY OF TEMPERATURE EFFECTS IN SILICON STRUCTURES WITH VANADIUM IMPURITIES},
  author = {SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK and Х.С. Далиев and З.М. Хусанов},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {5},
  pages = {1-6},
  doi = {10.37681/2181-1652-019-x-2021-5-1},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-5-1}
}

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