SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, Ф.А. Сапаров
INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES
- OPTICAL GAS ANALYZER OF EXPLOSIVE CONCENTRATIONS OF HYDROCARBONS IN THE ATMOSPHERE
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О.Х. Кулдашов, И.О. Холмирзаев, Ш.Э. Муродов, С.Ш. Рашидов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
OPTICAL GAS ANALYZER OF EXPLOSIVE CONCENTRATIONS OF HYDROCARBONS IN THE ATMOSPHERE
- STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Н.Ф. Зикриллаев, Т. Комилов, А.Ж. Хусанов, К.К Курбоналиев, М.М. Шоабдурахимова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES
- HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, А.Й. Бобоев, Д.П. Абдурахимов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y
- DIGITAL INFRARED HUMIDITY METER OF RAW COTTON IN BUNTS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, Golibzhon Kuldashov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
DIGITAL INFRARED HUMIDITY METER OF RAW COTTON IN BUNTS
- RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Ю. Ташметов, Sh. A. Makhmudov, А.Р. Рафиков, A. A. Sulaimonov, М.Ф. Жураева, Ж.С. Мирзара · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM
- STUDY AND ANALYSIS OF ELECTRICAL PARAMETERS OF SILICON PHOTOELECTRIC BATTERIES FROM VARIOUS TYPES OF SOLAR CELLS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Н. Турсунов, Х. Сабиров, Ш.Н. Абилфайзиев, Б.А. Юлдошов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
STUDY AND ANALYSIS OF ELECTRICAL PARAMETERS OF SILICON PHOTOELECTRIC BATTERIES FROM VARIOUS TYPES OF SOLAR CELLS
- INVESTIGATION OF THE HOLOGRAPHIC CHARACTERISTICS OF PHOTOCHROMIC MATERIALS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, З.Т. Азаматов, М.А. Йулдошев, Н.Н. Базарбаев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
INVESTIGATION OF THE HOLOGRAPHIC CHARACTERISTICS OF PHOTOCHROMIC MATERIALS
- THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.Э. Онаркулов, Ш.А. Юлдашев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
- STUDIES OF THE SURFACE OF A THIN SiO2(001) Ῑ10 FILM BY THE METHOD OF SCATTERING OF LOW-ENERGY IONS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М. K. Kаrimov, S.Kh. Khakimov, Я.Ж. Жаббарова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
STUDIES OF THE SURFACE OF A THIN SiO2(001) Ῑ10 FILM BY THE METHOD OF SCATTERING OF LOW-ENERGY IONS
- INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Г. Гулямов, М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, М.К. Уктамова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD