Investigation of the influence of Si-SiO2 transition layers on the capacity-voltage characteristics in three-layer silicon structures

SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, Ф.А. Сапаров

(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-yil

Annotatsiya

INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES

Maqola ma’lumotlari
MualliflarSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, Ф.А. Сапаров
Jurnal(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали
NashriyotЯримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти
ISSN2181-9947, 2181-1652
Nashr sanasi2021-10-30
Jild3
Son5
Betlar34-40
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.37681/2181-1652-019-x-2021-5-6
Indeksga qo‘shilgan2026-09-02

DOI: 10.37681/2181-1652-019-x-2021-5-6 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APASRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, & Ф.А. Сапаров (2021). INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 34-40. https://doi.org/10.37681/2181-1652-019-x-2021-5-6
GOST (OAK)SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, Ф.А. Сапаров INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 5. – P. 34-40. – DOI: 10.37681/2181-1652-019-x-2021-5-6.
MLASRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, and Ф.А. Сапаров. “INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 34-40, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-5-6
ChicagoSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, and Ф.А. Сапаров. “INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 34-40 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-5-6
HarvardSRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, and Ф.А. Сапаров (2021) ‘INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 34-40. https://doi.org/10.37681/2181-1652-019-x-2021-5-6
BibTeX
@article{sriofphysicsofsemiconductorsandmicroelectronicsatnuuznamedaftermirzoulugbek2021,
  title = {INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES},
  author = {SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK and Kh.S. Daliev and Ф.А. Сапаров},
  journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
  year = {2021},
  volume = {3},
  number = {5},
  pages = {34-40},
  doi = {10.37681/2181-1652-019-x-2021-5-6},
  url = {https://doi.org/10.37681/2181-1652-019-x-2021-5-6}
}

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