RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM
| Mualliflar | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Ю. Ташметов, Sh. A. Makhmudov, А.Р. Рафиков, A. A. Sulaimonov, М.Ф. Жураева, Ж.С. Мирзарайимов, Ф.З. Мирзарайимова |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-10-30 |
| Jild | 3 |
| Son | 5 |
| Betlar | 27-33 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-5-5 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-5-5 · Maqolaning asl sahifasi
| APA | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Ю. Ташметов, Sh. A. Makhmudov, А.Р. Рафиков, A. A. Sulaimonov, М.Ф. Жураева, Ж.С. Мирзарайимов, & Ф.З. Мирзарайимова (2021). RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 27-33. https://doi.org/10.37681/2181-1652-019-x-2021-5-5 |
|---|---|
| GOST (OAK) | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK va b. RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 5. – P. 27-33. – DOI: 10.37681/2181-1652-019-x-2021-5-5. |
| MLA | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Ю. Ташметов, Sh. A. Makhmudov, А.Р. Рафиков, A. A. Sulaimonov, М.Ф. Жураева, Ж.С. Мирзарайимов, and Ф.З. Мирзарайимова. “RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 27-33, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-5-5 |
| Chicago | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Ю. Ташметов, Sh. A. Makhmudov, А.Р. Рафиков, A. A. Sulaimonov, М.Ф. Жураева, Ж.С. Мирзарайимов, and Ф.З. Мирзарайимова. “RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 27-33 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-5-5 |
| Harvard | SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Ю. Ташметов, Sh. A. Makhmudov, А.Р. Рафиков, A. A. Sulaimonov, М.Ф. Жураева, Ж.С. Мирзарайимов, and Ф.З. Мирзарайимова (2021) ‘RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(5), 27-33. https://doi.org/10.37681/2181-1652-019-x-2021-5-5 |
| BibTeX | @article{sriofphysicsofsemiconductorsandmicroelectronicsatnuuznamedaftermirzoulugbek2021,
title = {RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM},
author = {SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK and М.Ю. Ташметов and Sh. A. Makhmudov and А.Р. Рафиков and A. A. Sulaimonov and М.Ф. Жураева and Ж.С. Мирзарайимов and Ф.З. Мирзарайимова},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {5},
pages = {27-33},
doi = {10.37681/2181-1652-019-x-2021-5-5},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-5-5}
} |
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