SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Х.С. Далиев, Golibzhon Kuldashov
- STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Н.Ф. Зикриллаев, Т. Комилов, А.Ж. Хусанов, К.К Курбоналиев, М.М. Шоабдурахимова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
STUDY OF THE ELEMENTAL COMPOSITION AND STRUCTURE OF HIGHER MANGANESE SILICIDES
- STUDY AND ANALYSIS OF ELECTRICAL PARAMETERS OF SILICON PHOTOELECTRIC BATTERIES FROM VARIOUS TYPES OF SOLAR CELLS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Н. Турсунов, Х. Сабиров, Ш.Н. Абилфайзиев, Б.А. Юлдошов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
STUDY AND ANALYSIS OF ELECTRICAL PARAMETERS OF SILICON PHOTOELECTRIC BATTERIES FROM VARIOUS TYPES OF SOLAR CELLS
- INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Kh.S. Daliev, Ф.А. Сапаров · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
INVESTIGATION OF THE INFLUENCE OF Si-SiO2 TRANSITION LAYERS ON THE CAPACITY-VOLTAGE CHARACTERISTICS IN THREE-LAYER SILICON STRUCTURES
- THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.Э. Онаркулов, Ш.А. Юлдашев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER
- OPTICAL GAS ANALYZER OF EXPLOSIVE CONCENTRATIONS OF HYDROCARBONS IN THE ATMOSPHERE
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, О.Х. Кулдашов, И.О. Холмирзаев, Ш.Э. Муродов, С.Ш. Рашидов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
OPTICAL GAS ANALYZER OF EXPLOSIVE CONCENTRATIONS OF HYDROCARBONS IN THE ATMOSPHERE
- INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Г. Гулямов, М. Г. Дадамирзаев, Mamura Odiljonovna Kosimova, М.К. Уктамова · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
INFLUENCE OF DEFORMATION ON PHOTOGRAPHY OF A p-n-JUNCTION UNDER THE INFLUENCE OF LIGHT AND IN A SUPERHIGH-FREQUENCY FIELD
- HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, А.Й. Бобоев, Д.П. Абдурахимов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
HIGH-RESOLUTION X-RAY DIFFRACTION INVESTIGATIONS OF FILMS OF SOLID SOLUTIONS (GaAs)1-x-y(Ge2)x(ZnSe)y
- INJECTION CURRENTS P-SI–N-SI1-XSNX–N+-SI1-XSNX (0X0.04)-STRUCTURES
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, С.З. Зайнабидинов, Х.М. Мадаминов, А.Ш. Икромов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
INJECTION CURRENTS P-SI–N-SI1-XSNX–N+-SI1-XSNX (0X0.04)-STRUCTURES
- RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, М.Ю. Ташметов, Sh. A. Makhmudov, А.Р. Рафиков, A. A. Sulaimonov, М.Ф. Жураева, Ж.С. Мирзара · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-10-30
RADIATIONS FOR THE LIFETIME OF CHARGE CARRIERS IN SILICON DOPED WITH COPPER AND IRIDIUM
- THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, К.А. Корабоев, Д. Т. Якубов, Х.Х. Курбонов, У.К. Сапаев · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS