In this article, the experimental analysis of possibility of use of deformation of a crystal lattice of silicon for increase of efficiency of photoelectric transformation of energy made . For the first time the flex - photovoltaic (FFV) effect in silicon p - n - structures found out at influence of local mechanical pressure on the frontal surface. Laws of display of FFV effect depending on size of local pressure force and intensity of photoexcitation defined. Statistical processing of experimenta l data by a metho d of the least squares is executed and the new empirical formula for experimentally certain of dependence of short circuit photocurrent of silicon structure on the local mechanical pressure created on frontal surface on various distances from a contact str ip is received
| Mualliflar | R. Aliev, B. Rashidov, V. Abduazimov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-06-30 |
| Jild | 3 |
| Son | 3 |
| Betlar | 56-61 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-3-10 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-3-10 · Maqolaning asl sahifasi
| APA | R. Aliev, B. Rashidov, & V. Abduazimov (2021). FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 56-61. https://doi.org/10.37681/2181-1652-019-x-2021-3-10 |
|---|---|
| GOST (OAK) | R. Aliev, B. Rashidov, V. Abduazimov FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 3. – P. 56-61. – DOI: 10.37681/2181-1652-019-x-2021-3-10. |
| MLA | R. Aliev, B. Rashidov, and V. Abduazimov. “FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 56-61, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-3-10 |
| Chicago | R. Aliev, B. Rashidov, and V. Abduazimov. “FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 56-61 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-3-10 |
| Harvard | R. Aliev, B. Rashidov, and V. Abduazimov (2021) ‘FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(3), 56-61. https://doi.org/10.37681/2181-1652-019-x-2021-3-10 |
| BibTeX | @article{raliev2021,
title = {FLEXOPHOTOVOLTAIC EFFECT IN SILICON p - n - STRUCTURES},
author = {R. Aliev and B. Rashidov and V. Abduazimov},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {3},
pages = {56-61},
doi = {10.37681/2181-1652-019-x-2021-3-10},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-3-10}
} |
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