In this work, it is shown that the introducti on of nickel atoms in the process of growing a silicon crystal makes it possible to obtain a mate rial with stable electrophysical parameters during thermal annealing at a temperature of 450 Ԩand durations t = 0.5÷25 hours. This is the most cost-effective way to create a material for semiconductor devices with stable parameters
| Mualliflar | K. A. Ismailov, E. J. Kosbergenov |
|---|---|
| Jurnal | (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали |
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
| ISSN | 2181-9947, 2181-1652 |
| Nashr sanasi | 2021-04-30 |
| Jild | 3 |
| Son | 2 |
| Betlar | 16-19 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.37681/2181-1652-019-x-2021-2-2 |
| Indeksga qo‘shilgan | 2026-09-02 |
DOI: 10.37681/2181-1652-019-x-2021-2-2 · Maqolaning asl sahifasi
| APA | K. A. Ismailov, & E. J. Kosbergenov (2021). GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 16-19. https://doi.org/10.37681/2181-1652-019-x-2021-2-2 |
|---|---|
| GOST (OAK) | K. A. Ismailov, E. J. Kosbergenov GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH // (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали. – 2021. – T. 3, № 2. – P. 16-19. – DOI: 10.37681/2181-1652-019-x-2021-2-2. |
| MLA | K. A. Ismailov, and E. J. Kosbergenov. “GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 16-19, 2021. https://doi.org/10.37681/2181-1652-019-x-2021-2-2 |
| Chicago | K. A. Ismailov, and E. J. Kosbergenov. “GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH.” (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 16-19 (2021). https://doi.org/10.37681/2181-1652-019-x-2021-2-2 |
| Harvard | K. A. Ismailov, and E. J. Kosbergenov (2021) ‘GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH’, (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали, 3(2), 16-19. https://doi.org/10.37681/2181-1652-019-x-2021-2-2 |
| BibTeX | @article{kaismailov2021,
title = {GENERATION OF THERMODONORS IN SILICON DOPED WITH NICKEL DURING GROWTH},
author = {K. A. Ismailov and E. J. Kosbergenov},
journal = {(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали},
year = {2021},
volume = {3},
number = {2},
pages = {16-19},
doi = {10.37681/2181-1652-019-x-2021-2-2},
url = {https://doi.org/10.37681/2181-1652-019-x-2021-2-2}
} |
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