In this work, we studied the change in the elemental and chemical composition of the Cu surface during cleaning by heating in combination with ion bombardment. For the elemental analysis of copper and the chemical states of atoms of impurity elements and, first of all, oxygen and hydrogen in it, we used the ОES and SIMS methods. Using the OES method, we calculated the concentrations of the main and impurity elements. Also, the surface was cleaned by implantation of active metal ions with subsequent annealing at T≃1000 K. To do this, Cu was cleaned first by heating to T≃1200 K, then Cs+ ions with E0=1 keV were directed to the cleaned surface at a dose saturation d≃6 1016 cm-2. With the help of such results, it is possible to correct technological processes for obtaining copper with improved purity.
| Mualliflar | Исаханов, З.А., Косимов, И.О., Халматов, А.С., Мухтаров, З.Э., Умирзаков, Б.Е., Ахмедов, А.А. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-10-07 |
| Jild | 25 |
| Son | 3 |
| Til | Rus |
| DOI | 10.52304/.v25i3.449 |
DOI: 10.52304/.v25i3.449 · Maqolaning asl sahifasi
очистка, прогрев, имплантация, отжиг, концентрация, состав, водородная болезнь, бомбардировка, интенсивность, cleaning, heating, implantation, annealing, concentration, compound, hydrogen disease, bombardment, intensity
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