Defects characteristic of hydrogenated amorphous semiconductors and defect absorption spectra

Абдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., Холмирзаев, О.Т.

O‘zbekiston fizika jurnali · 2023-yil

Annotatsiya

In the present work, the absorption spectra of all defects characteristic of hydrogenated amorphous silicon are theoretically studied. It has been found that the main role in determining the defect absorption spectrum plays the partial spectra determined by optical transitions of electrons between allowed bands and defects. It is shown that with a power-law distribution of the density of electronic states in allowed bands, the spectra of optical transitions between them and defects do not depend on the value of this power.

Maqola ma’lumotlari
MualliflarАбдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., Холмирзаев, О.Т.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2023-10-07
Jild25
Son3
TilRus
DOI10.52304/.v25i3.447

Kalit so‘zlar

аморфные полупроводники, оптические переходы электронов с участием дефектов, спектры дефектного поглощения, парциальные спектры оптических электронных переходов с участием дефектов, amorphous semiconductors, optical transitions of electrons with the participation of defects, spectra of defective absorption, partial spectra of optical electronic transitions with the participation of defects

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