In the present work, the absorption spectra of all defects characteristic of hydrogenated amorphous silicon are theoretically studied. It has been found that the main role in determining the defect absorption spectrum plays the partial spectra determined by optical transitions of electrons between allowed bands and defects. It is shown that with a power-law distribution of the density of electronic states in allowed bands, the spectra of optical transitions between them and defects do not depend on the value of this power.
| Mualliflar | Абдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., Холмирзаев, О.Т. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-10-07 |
| Jild | 25 |
| Son | 3 |
| Til | Rus |
| DOI | 10.52304/.v25i3.447 |
DOI: 10.52304/.v25i3.447 · Maqolaning asl sahifasi
аморфные полупроводники, оптические переходы электронов с участием дефектов, спектры дефектного поглощения, парциальные спектры оптических электронных переходов с участием дефектов, amorphous semiconductors, optical transitions of electrons with the participation of defects, spectra of defective absorption, partial spectra of optical electronic transitions with the participation of defects
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