Defects characteristic of hydrogenated amorphous semiconductors and defect absorption spectra

Абдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., Холмирзаев, О.Т.

O‘zbekiston fizika jurnali · 2023-yil

Annotatsiya

In the present work, the absorption spectra of all defects characteristic of hydrogenated amorphous silicon are theoretically studied. It has been found that the main role in determining the defect absorption spectrum plays the partial spectra determined by optical transitions of electrons between allowed bands and defects. It is shown that with a power-law distribution of the density of electronic states in allowed bands, the spectra of optical transitions between them and defects do not depend on the value of this power.

Maqola ma’lumotlari
MualliflarАбдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., Холмирзаев, О.Т.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2023-10-07
Jild25
Son3
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v25i3.447
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v25i3.447 · Maqolaning asl sahifasi

Kalit so‘zlar

аморфные полупроводники, оптические переходы электронов с участием дефектов, спектры дефектного поглощения, парциальные спектры оптических электронных переходов с участием дефектов, amorphous semiconductors, optical transitions of electrons with the participation of defects, spectra of defective absorption, partial spectra of optical electronic transitions with the participation of defects

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAАбдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., & Холмирзаев, О.Т. (2023). Defects characteristic of hydrogenated amorphous semiconductors and defect absorption spectra. O‘zbekiston fizika jurnali, 25(3). https://doi.org/10.52304/.v25i3.447
GOST (OAK)Абдулазизов, Б.Т. va b. Defects characteristic of hydrogenated amorphous semiconductors and defect absorption spectra // O‘zbekiston fizika jurnali. – 2023. – T. 25, № 3. – DOI: 10.52304/.v25i3.447.
MLAАбдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., and Холмирзаев, О.Т. “Defects characteristic of hydrogenated amorphous semiconductors and defect absorption spectra.” O‘zbekiston fizika jurnali, 25(3), 2023. https://doi.org/10.52304/.v25i3.447
ChicagoАбдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., and Холмирзаев, О.Т. “Defects characteristic of hydrogenated amorphous semiconductors and defect absorption spectra.” O‘zbekiston fizika jurnali, 25(3) (2023). https://doi.org/10.52304/.v25i3.447
HarvardАбдулазизов, Б.Т., Икрамов, Р.Г., Нуриддинова, М.А., Султанов, Б.К., and Холмирзаев, О.Т (2023) ‘Defects characteristic of hydrogenated amorphous semiconductors and defect absorption spectra’, O‘zbekiston fizika jurnali, 25(3). https://doi.org/10.52304/.v25i3.447
BibTeX
@article{article2023,
  title = {Defects characteristic of hydrogenated amorphous semiconductors and defect absorption spectra},
  author = {Абдулазизов, Б.Т. and Икрамов, Р.Г. and Нуриддинова, М.А. and Султанов, Б.К. and Холмирзаев, О.Т.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2023},
  volume = {25},
  number = {3},
  doi = {10.52304/.v25i3.447},
  url = {https://doi.org/10.52304/.v25i3.447}
}

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