As we know if por-Si/с-Si is deposited on a -type crystalline silicon substrate, the deep levels and surface states are formed in por-Si. Due to the formation of these levels and states in por-Si, the shift of the Fermi level (EF) to the side of conduction band is observed. As a result, a potential barrier arises between the layers of por-Si and с-Si. Also the p-p+ junction is formed because of the difference of hole concentration in por-Si and с-Si. Due to the different concentration of holes in both sides of the junction, a diffusive current appears. In this article, analytical expression for the temperature dependence of the diffusive current is proposed based on the diffusion theory.
| Mualliflar | Бобохўжаев, У.С., Усманов, М.А. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2023-10-07 |
| Jild | 25 |
| Son | 3 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v25i3.448 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v25i3.448 · Maqolaning asl sahifasi
por-Si, глубокий уровень поверхностных состояний, диффузионный ток, захват дырок в ловушках, температурная зависимость, por-Si, deep level of surface states, diffusive current, capture of holes in traps, temperature dependence
| APA | Бобохўжаев, У.С., & Усманов, М.А. (2023). Features of p-por-Si/p-c-Si structures and current transfer mechanism. O‘zbekiston fizika jurnali, 25(3). https://doi.org/10.52304/.v25i3.448 |
|---|---|
| GOST (OAK) | Бобохўжаев, У.С., Усманов, М.А. Features of p-por-Si/p-c-Si structures and current transfer mechanism // O‘zbekiston fizika jurnali. – 2023. – T. 25, № 3. – DOI: 10.52304/.v25i3.448. |
| MLA | Бобохўжаев, У.С., and Усманов, М.А. “Features of p-por-Si/p-c-Si structures and current transfer mechanism.” O‘zbekiston fizika jurnali, 25(3), 2023. https://doi.org/10.52304/.v25i3.448 |
| Chicago | Бобохўжаев, У.С., and Усманов, М.А. “Features of p-por-Si/p-c-Si structures and current transfer mechanism.” O‘zbekiston fizika jurnali, 25(3) (2023). https://doi.org/10.52304/.v25i3.448 |
| Harvard | Бобохўжаев, У.С., and Усманов, М.А (2023) ‘Features of p-por-Si/p-c-Si structures and current transfer mechanism’, O‘zbekiston fizika jurnali, 25(3). https://doi.org/10.52304/.v25i3.448 |
| BibTeX | @article{article2023,
title = {Features of p-por-Si/p-c-Si structures and current transfer mechanism},
author = {Бобохўжаев, У.С. and Усманов, М.А.},
journal = {O‘zbekiston fizika jurnali},
year = {2023},
volume = {25},
number = {3},
doi = {10.52304/.v25i3.448},
url = {https://doi.org/10.52304/.v25i3.448}
} |
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