Features of p-por-Si/p-c-Si structures and current transfer mechanism

Бобохўжаев, У.С., Усманов, М.А.

O‘zbekiston fizika jurnali · 2023-yil

Annotatsiya

As we know if por-Si/с-Si is deposited on a -type crystalline silicon substrate, the deep levels and surface states are formed in por-Si. Due to the formation of these levels and states in por-Si, the shift of the Fermi level (EF) to the side of conduction band is observed. As a result, a potential barrier arises between the layers of por-Si and с-Si. Also the p-p+ junction is formed because of the difference of hole concentration in por-Si and с-Si. Due to the different concentration of holes in both sides of the junction, a diffusive current appears. In this article, analytical expression for the temperature dependence of the diffusive current is proposed based on the diffusion theory.

Maqola ma’lumotlari
MualliflarБобохўжаев, У.С., Усманов, М.А.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2023-10-07
Jild25
Son3
TilRus
DOI10.52304/.v25i3.448

Kalit so‘zlar

por-Si, глубокий уровень поверхностных состояний, диффузионный ток, захват дырок в ловушках, температурная зависимость, por-Si, deep level of surface states, diffusive current, capture of holes in traps, temperature dependence

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