As we know if por-Si/с-Si is deposited on a -type crystalline silicon substrate, the deep levels and surface states are formed in por-Si. Due to the formation of these levels and states in por-Si, the shift of the Fermi level (EF) to the side of conduction band is observed. As a result, a potential barrier arises between the layers of por-Si and с-Si. Also the p-p+ junction is formed because of the difference of hole concentration in por-Si and с-Si. Due to the different concentration of holes in both sides of the junction, a diffusive current appears. In this article, analytical expression for the temperature dependence of the diffusive current is proposed based on the diffusion theory.
| Mualliflar | Бобохўжаев, У.С., Усманов, М.А. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-10-07 |
| Jild | 25 |
| Son | 3 |
| Til | Rus |
| DOI | 10.52304/.v25i3.448 |
DOI: 10.52304/.v25i3.448 · Maqolaning asl sahifasi
por-Si, глубокий уровень поверхностных состояний, диффузионный ток, захват дырок в ловушках, температурная зависимость, por-Si, deep level of surface states, diffusive current, capture of holes in traps, temperature dependence
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