By the secondary ion mass spectrometry (SIMS) method, the distribution of boron impuritieswas examined in multilayer thin films of polycrystalline silicon doped with boron and nitrogen,deposited on SiO2 substrate, both before and after thermal annealing. It is shown that afterthermal annealing, the boron concentration remains stable in the upper layer of the polycrystallinesilicon with boron doping to a depth of 0.09 μm, while in the nitrogen-doped layer, a sharpdecrease observed to a depth of about 0.19 μm, and boron does not reach the SiO2 layer. Theresults indicate a slowdown in the diffusion of boron impurities due to the presence of anamorphous layer and nitrogen. This result may be useful for maintaining the integrity of theSiO2 layer.
| Mualliflar | Халматов, А.С., Джаббарганов, Р., Исаханов, З.А. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2025-10-31 |
| Jild | 27 |
| Son | 3 |
| Til | Rus |
| DOI | 10.52304/.v27i3.593 |
DOI: 10.52304/.v27i3.593 · Maqolaning asl sahifasi
вторичная ионная масс-спектрометрия (ВИМС), химическое осаждение из паровой фазы (CVD), поликремний, оксид кремния, отжиг, легирование, диффузия, secondary ion mass spectrometry (SIMS), chemical vapor deposition (CVD), polysilicon, silicon oxide, annealing, doping, diffusion
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