A SIMS study of thermal diffusion profiles of boron into nitrogen- and boron-doped polysilicon layers on silicon oxide

Халматов, А.С., Джаббарганов, Р., Исаханов, З.А.

O‘zbekiston fizika jurnali · 2025-yil

Annotatsiya

By the secondary ion mass spectrometry (SIMS) method, the distribution of boron impuritieswas examined in multilayer thin films of polycrystalline silicon doped with boron and nitrogen,deposited on SiO2 substrate, both before and after thermal annealing. It is shown that afterthermal annealing, the boron concentration remains stable in the upper layer of the polycrystallinesilicon with boron doping to a depth of 0.09 μm, while in the nitrogen-doped layer, a sharpdecrease observed to a depth of about 0.19 μm, and boron does not reach the SiO2 layer. Theresults indicate a slowdown in the diffusion of boron impurities due to the presence of anamorphous layer and nitrogen. This result may be useful for maintaining the integrity of theSiO2 layer.

Maqola ma’lumotlari
MualliflarХалматов, А.С., Джаббарганов, Р., Исаханов, З.А.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2025-10-31
Jild27
Son3
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v27i3.593
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v27i3.593 · Maqolaning asl sahifasi

Kalit so‘zlar

вторичная ионная масс-спектрометрия (ВИМС), химическое осаждение из паровой фазы (CVD), поликремний, оксид кремния, отжиг, легирование, диффузия, secondary ion mass spectrometry (SIMS), chemical vapor deposition (CVD), polysilicon, silicon oxide, annealing, doping, diffusion

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAХалматов, А.С., Джаббарганов, Р., & Исаханов, З.А. (2025). A SIMS study of thermal diffusion profiles of boron into nitrogen- and boron-doped polysilicon layers on silicon oxide. O‘zbekiston fizika jurnali, 27(3). https://doi.org/10.52304/.v27i3.593
GOST (OAK)Халматов, А.С., Джаббарганов, Р., Исаханов, З.А. A SIMS study of thermal diffusion profiles of boron into nitrogen- and boron-doped polysilicon layers on silicon oxide // O‘zbekiston fizika jurnali. – 2025. – T. 27, № 3. – DOI: 10.52304/.v27i3.593.
MLAХалматов, А.С., Джаббарганов, Р., and Исаханов, З.А. “A SIMS study of thermal diffusion profiles of boron into nitrogen- and boron-doped polysilicon layers on silicon oxide.” O‘zbekiston fizika jurnali, 27(3), 2025. https://doi.org/10.52304/.v27i3.593
ChicagoХалматов, А.С., Джаббарганов, Р., and Исаханов, З.А. “A SIMS study of thermal diffusion profiles of boron into nitrogen- and boron-doped polysilicon layers on silicon oxide.” O‘zbekiston fizika jurnali, 27(3) (2025). https://doi.org/10.52304/.v27i3.593
HarvardХалматов, А.С., Джаббарганов, Р., and Исаханов, З.А (2025) ‘A SIMS study of thermal diffusion profiles of boron into nitrogen- and boron-doped polysilicon layers on silicon oxide’, O‘zbekiston fizika jurnali, 27(3). https://doi.org/10.52304/.v27i3.593
BibTeX
@article{article2025,
  title = {A SIMS study of thermal diffusion profiles of boron into nitrogen- and boron-doped polysilicon layers on silicon oxide},
  author = {Халматов, А.С. and Джаббарганов, Р. and Исаханов, З.А.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2025},
  volume = {27},
  number = {3},
  doi = {10.52304/.v27i3.593},
  url = {https://doi.org/10.52304/.v27i3.593}
}

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