This paper presents experimental results of studying the structural and electrophysical propertiesof n-GaAs−p-(ZnSe)1-x-y(Ge2)x(GaAs1-δBiδ)y heterostructure with different nanoinclusionsobtained by liquid-phase epitaxy. On the basis of X-ray microprobe and structural analysis, thedistribution profile of ZnSe, Ge2 and GaAs1-δBiδ components in the epitaxial layer with a gradualchange of composition along the depth has been determined. The formation of Ge2 nanocrystalsand GaAs1-δBiδ quantum wells, which determine unique photovoltaic properties of theinvestigated heterostructure, has been established. Charge transfer mechanisms depending onthe direction of current flow have been determined, and the criterion of predominance of thedrift mechanism of charge transfer over the diffusion one has been revealed.
| Mualliflar | Зайнабидинов, С.З., Бобоев, А.Й., Солиев, И.М., Юнусалиев, Н.Ю. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2025-10-31 |
| Jild | 27 |
| Son | 3 |
| Til | Rus |
| DOI | 10.52304/.v27i3.596 |
DOI: 10.52304/.v27i3.596 · Maqolaning asl sahifasi
примесь, твёрдый раствор, атомное соединение, гетероструктуры, нанокристалл, квантовая яма, impurity, solid solution, atomic compound, heterostructures, nanocrystal, quantum well
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