Structural features and electrical properties of the n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y heterostructure with various nanoscale inclusions

Зайнабидинов, С.З., Бобоев, А.Й., Солиев, И.М., Юнусалиев, Н.Ю.

O‘zbekiston fizika jurnali · 2025-yil

Annotatsiya

This paper presents experimental results of studying the structural and electrophysical propertiesof n-GaAs−p-(ZnSe)1-x-y(Ge2)x(GaAs1-δBiδ)y heterostructure with different nanoinclusionsobtained by liquid-phase epitaxy. On the basis of X-ray microprobe and structural analysis, thedistribution profile of ZnSe, Ge2 and GaAs1-δBiδ components in the epitaxial layer with a gradualchange of composition along the depth has been determined. The formation of Ge2 nanocrystalsand GaAs1-δBiδ quantum wells, which determine unique photovoltaic properties of theinvestigated heterostructure, has been established. Charge transfer mechanisms depending onthe direction of current flow have been determined, and the criterion of predominance of thedrift mechanism of charge transfer over the diffusion one has been revealed.

Maqola ma’lumotlari
MualliflarЗайнабидинов, С.З., Бобоев, А.Й., Солиев, И.М., Юнусалиев, Н.Ю.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2025-10-31
Jild27
Son3
TilRus
DOI10.52304/.v27i3.596

Kalit so‘zlar

примесь, твёрдый раствор, атомное соединение, гетероструктуры, нанокристалл, квантовая яма, impurity, solid solution, atomic compound, heterostructures, nanocrystal, quantum well

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