Thermally stable low-resistance ohmic contacts are required for the creation of high-speedGaAs integrated circuits. In this work, annealing of MoGeW contact structures in an InAs atmosphereare studied. High thermal stability of the studied structures and their technologicalsuitability for subsequent stages of the integrated circuit manufacturing process are demonstrated.During the experiment, contact resistance measurements and X-ray structural analysisof MoGeW contacts are carried out to determine the parameters that make it possible to obtainlow-resistance ohmic contacts. It was determined that the contact resistance depends on the ratioof the Mo/Ge layer thicknesses and the annealing temperature.
| Mualliflar | Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г., Мустафаев, Г.А. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2025-10-31 |
| Jild | 27 |
| Son | 3 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v27i3.595 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v27i3.595 · Maqolaning asl sahifasi
омический контакт, термостабильность, термическая обработка, контактное сопротивление, ионная имплантация, вжигание, ohmic contact, thermal stability, heat treatment, contact resistance, ion implantation, annealing
| APA | Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г., & Мустафаев, Г.А. (2025). Formation of thermally stable ohmic contacts based on MoGeInW. O‘zbekiston fizika jurnali, 27(3). https://doi.org/10.52304/.v27i3.595 |
|---|---|
| GOST (OAK) | Черкесова, Н.В. va b. Formation of thermally stable ohmic contacts based on MoGeInW // O‘zbekiston fizika jurnali. – 2025. – T. 27, № 3. – DOI: 10.52304/.v27i3.595. |
| MLA | Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г., and Мустафаев, Г.А. “Formation of thermally stable ohmic contacts based on MoGeInW.” O‘zbekiston fizika jurnali, 27(3), 2025. https://doi.org/10.52304/.v27i3.595 |
| Chicago | Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г., and Мустафаев, Г.А. “Formation of thermally stable ohmic contacts based on MoGeInW.” O‘zbekiston fizika jurnali, 27(3) (2025). https://doi.org/10.52304/.v27i3.595 |
| Harvard | Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г., and Мустафаев, Г.А (2025) ‘Formation of thermally stable ohmic contacts based on MoGeInW’, O‘zbekiston fizika jurnali, 27(3). https://doi.org/10.52304/.v27i3.595 |
| BibTeX | @article{article2025,
title = {Formation of thermally stable ohmic contacts based on MoGeInW},
author = {Черкесова, Н.В. and Ашуров, Х.Б. and Мустафаев, А.Г. and Мустафаев, Г.А.},
journal = {O‘zbekiston fizika jurnali},
year = {2025},
volume = {27},
number = {3},
doi = {10.52304/.v27i3.595},
url = {https://doi.org/10.52304/.v27i3.595}
} |
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