The Effect of Thermal and Laser Annealing on the Composition and Structure of Ion-Dopped Ge Layers

Исаханов, З.А., Умирзаков, Б.Е., Ташмухамедова, Д.А., Абраева, С.Т., Худайбердиев, И.Ф., Касимов, Б.Ш.

O‘zbekiston fizika jurnali · 2025-yil

Annotatsiya

The effects of thermal and laser annealing on the structure and composition of Na+-implantedGe(111) were investigated using Auger electron spectroscopy and secondary ion mass spectrometry.Ion implantation was performed with Na+ ions at an energy of E0 = 1 keV and a doseof D = 10¹6 cm−². This process resulted in complete amorphization of the Ge surface layers andthe formation of various Na–Ge compounds within the ion-doped region, containing 8–10 at.%of unbound Na and Ge atoms. Upon annealing at T = 900 K, a NaGe-type film forms, thoughthe doped layer remains amorphous. At T = 1100 K, a uniform single-crystal NaGe2 film ofapproximately 30–35 Å thickness is observed. Laser annealing at an energy density of W ≈ 1.2J·cm−² produces a single-crystal cubic NaGe film with a thickness of 35–40 Å, while increasingW ≈1.5 J·cm−² results in the formation of a NaGe2 film of similar thickness. Additionally,for samples implanted with Na+ ions at E0 ≥ 3 keV, heating at T ≤ 700 K or laser annealing atW ≤ 1.5 J·cm−² leads to increased sodium concentration near the surface and a shift of the sodiumdepth profile CNa peak toward the surface.

Maqola ma’lumotlari
MualliflarИсаханов, З.А., Умирзаков, Б.Е., Ташмухамедова, Д.А., Абраева, С.Т., Худайбердиев, И.Ф., Касимов, Б.Ш.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2025-10-31
Jild27
Son3
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v27i3.594
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v27i3.594 · Maqolaning asl sahifasi

Kalit so‘zlar

ионная имплантация, распыление, состав, прогрев, лазерный отжиг, оже-электронная спектроскопия, ion implantation, sputtering, composition, thermal annealing, laser annealing, Auger electron spectroscopy

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAИсаханов, З.А., Умирзаков, Б.Е., Ташмухамедова, Д.А., Абраева, С.Т., Худайбердиев, И.Ф., & Касимов, Б.Ш. (2025). The Effect of Thermal and Laser Annealing on the Composition and Structure of Ion-Dopped Ge Layers. O‘zbekiston fizika jurnali, 27(3). https://doi.org/10.52304/.v27i3.594
GOST (OAK)Исаханов, З.А. va b. The Effect of Thermal and Laser Annealing on the Composition and Structure of Ion-Dopped Ge Layers // O‘zbekiston fizika jurnali. – 2025. – T. 27, № 3. – DOI: 10.52304/.v27i3.594.
MLAИсаханов, З.А., Умирзаков, Б.Е., Ташмухамедова, Д.А., Абраева, С.Т., Худайбердиев, И.Ф., and Касимов, Б.Ш. “The Effect of Thermal and Laser Annealing on the Composition and Structure of Ion-Dopped Ge Layers.” O‘zbekiston fizika jurnali, 27(3), 2025. https://doi.org/10.52304/.v27i3.594
ChicagoИсаханов, З.А., Умирзаков, Б.Е., Ташмухамедова, Д.А., Абраева, С.Т., Худайбердиев, И.Ф., and Касимов, Б.Ш. “The Effect of Thermal and Laser Annealing on the Composition and Structure of Ion-Dopped Ge Layers.” O‘zbekiston fizika jurnali, 27(3) (2025). https://doi.org/10.52304/.v27i3.594
HarvardИсаханов, З.А., Умирзаков, Б.Е., Ташмухамедова, Д.А., Абраева, С.Т., Худайбердиев, И.Ф., and Касимов, Б.Ш (2025) ‘The Effect of Thermal and Laser Annealing on the Composition and Structure of Ion-Dopped Ge Layers’, O‘zbekiston fizika jurnali, 27(3). https://doi.org/10.52304/.v27i3.594
BibTeX
@article{article2025,
  title = {The Effect of Thermal and Laser Annealing on the Composition and Structure of Ion-Dopped Ge Layers},
  author = {Исаханов, З.А. and Умирзаков, Б.Е. and Ташмухамедова, Д.А. and Абраева, С.Т. and Худайбердиев, И.Ф. and Касимов, Б.Ш.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2025},
  volume = {27},
  number = {3},
  doi = {10.52304/.v27i3.594},
  url = {https://doi.org/10.52304/.v27i3.594}
}

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