The effects of thermal and laser annealing on the structure and composition of Na+-implantedGe(111) were investigated using Auger electron spectroscopy and secondary ion mass spectrometry.Ion implantation was performed with Na+ ions at an energy of E0 = 1 keV and a doseof D = 10¹6 cm−². This process resulted in complete amorphization of the Ge surface layers andthe formation of various Na–Ge compounds within the ion-doped region, containing 8–10 at.%of unbound Na and Ge atoms. Upon annealing at T = 900 K, a NaGe-type film forms, thoughthe doped layer remains amorphous. At T = 1100 K, a uniform single-crystal NaGe2 film ofapproximately 30–35 Å thickness is observed. Laser annealing at an energy density of W ≈ 1.2J·cm−² produces a single-crystal cubic NaGe film with a thickness of 35–40 Å, while increasingW ≈1.5 J·cm−² results in the formation of a NaGe2 film of similar thickness. Additionally,for samples implanted with Na+ ions at E0 ≥ 3 keV, heating at T ≤ 700 K or laser annealing atW ≤ 1.5 J·cm−² leads to increased sodium concentration near the surface and a shift of the sodiumdepth profile CNa peak toward the surface.
| Mualliflar | Исаханов, З.А., Умирзаков, Б.Е., Ташмухамедова, Д.А., Абраева, С.Т., Худайбердиев, И.Ф., Касимов, Б.Ш. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2025-10-31 |
| Jild | 27 |
| Son | 3 |
| Til | Rus |
| DOI | 10.52304/.v27i3.594 |
DOI: 10.52304/.v27i3.594 · Maqolaning asl sahifasi
ионная имплантация, распыление, состав, прогрев, лазерный отжиг, оже-электронная спектроскопия, ion implantation, sputtering, composition, thermal annealing, laser annealing, Auger electron spectroscopy
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