Using the methods of powder X-ray diffraction, secondary ion mass-spectroscopy, Auger electron spectroscopy, photoelectron spectroscopy, and spectroscopy of elastically reflected electrons, the composition, density of electron’s state in the valence band, and parameters of the energy bands of a thick TiO2 film obtained by thermal oxidation and TiO2 nanofilms obtained by О2+ ion implantation in Ti and subsequent annealing were studied.. It is shown that the TiO2film with a thickness of 3 µm has a strict stoichiometric composition over its depth. In the case of ion-implanted Ti, a layer is formed consisting of oxides of the TiO2 and TiO types and unbound Ti and O atoms. After annealing at T = 800 K for 30 min, a uniform TiO2 film with a thickness of ~25–30 Å was formed. It is shown that the TiO2 photoelectron spectrum has three maxima due to the excitation of electrons from the hybridized 4s, 4p Ti levels with 2p oxygen levels. It has been established that the band gap of the TiO2 nanofilm is ~ 3.1 eV, and the electron affinity value is χ = 3.8 eV.
| Mualliflar | Исаханов, З.А., Косимов, И.О., Ахунов, Ш., Халматов, А.С., Абдуваитов, А.А., Ташмухамедова, Д.А., Умирзаков, Б.Е. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-06-25 |
| Jild | 25 |
| Son | 2 |
| Til | Rus |
| DOI | 10.52304/.v25i2.420 |
DOI: 10.52304/.v25i2.420 · Maqolaning asl sahifasi
ионная бомбардировка, электронная структура, ширина запрещенной зоны, гибридизированные состояния, масс спектры, спектры упруго-отраженных электронов, оже-пик, ion bombardment, electronic structure, band gap, hybridized states, mass spectra, spectra of elastically reflected electrons, Auger-peak
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