Ohmic contact for n-4H-SiC

Жураев, Х.Н., Хажиев, М.У., Давлатов, А.Б., Абдулазизов, Б.Т., Атабаев, Б.Г.

O‘zbekiston fizika jurnali · 2023-yil

Annotatsiya

In this work, the ohmic contact has been investigated for n-4H-SiC. It is shown that a Schottky barrier is formed in the samples during the vacuum heat treatment at 700°C, and at 950°C nickel atoms begin to actively diffuse into the n-4H-SiC crystal, which leads to the disappearance of the sharp metal-semiconductor interface and, consequently, to the disappearance of the Schottky barrier. The resistivity of nickel ohmic contacts obtained for n-type 4H-SiC is determined. The lowest resistivity of ohmic contact was about 17×10−5 Ohm·cm.

Maqola ma’lumotlari
MualliflarЖураев, Х.Н., Хажиев, М.У., Давлатов, А.Б., Абдулазизов, Б.Т., Атабаев, Б.Г.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2023-06-25
Jild25
Son2
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v25i2.419
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v25i2.419 · Maqolaning asl sahifasi

Kalit so‘zlar

4H-SiC, омический контакт, термическая обработка, барьер Шоттки, 4H-SiC, ohmic contact, thermal treatments, Schottky barrier

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAЖураев, Х.Н., Хажиев, М.У., Давлатов, А.Б., Абдулазизов, Б.Т., & Атабаев, Б.Г. (2023). Ohmic contact for n-4H-SiC. O‘zbekiston fizika jurnali, 25(2). https://doi.org/10.52304/.v25i2.419
GOST (OAK)Жураев, Х.Н. va b. Ohmic contact for n-4H-SiC // O‘zbekiston fizika jurnali. – 2023. – T. 25, № 2. – DOI: 10.52304/.v25i2.419.
MLAЖураев, Х.Н., Хажиев, М.У., Давлатов, А.Б., Абдулазизов, Б.Т., and Атабаев, Б.Г. “Ohmic contact for n-4H-SiC.” O‘zbekiston fizika jurnali, 25(2), 2023. https://doi.org/10.52304/.v25i2.419
ChicagoЖураев, Х.Н., Хажиев, М.У., Давлатов, А.Б., Абдулазизов, Б.Т., and Атабаев, Б.Г. “Ohmic contact for n-4H-SiC.” O‘zbekiston fizika jurnali, 25(2) (2023). https://doi.org/10.52304/.v25i2.419
HarvardЖураев, Х.Н., Хажиев, М.У., Давлатов, А.Б., Абдулазизов, Б.Т., and Атабаев, Б.Г (2023) ‘Ohmic contact for n-4H-SiC’, O‘zbekiston fizika jurnali, 25(2). https://doi.org/10.52304/.v25i2.419
BibTeX
@article{article2023,
  title = {Ohmic contact for n-4H-SiC},
  author = {Жураев, Х.Н. and Хажиев, М.У. and Давлатов, А.Б. and Абдулазизов, Б.Т. and Атабаев, Б.Г.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2023},
  volume = {25},
  number = {2},
  doi = {10.52304/.v25i2.419},
  url = {https://doi.org/10.52304/.v25i2.419}
}

Boshqa maqola uchun iqtibos tayyorlash

O‘zbekiston fizika jurnali jurnalidan boshqa maqolalar

O‘zbekiston fizika jurnali — barcha maqolalar · 2023-yil arxivi

Жураев, Х.Н. — boshqa maqolalari

Fizika-matematika sohasidagi boshqa maqolalar

Fizika-matematika sohasidagi OAK jurnallari