In this work, the ohmic contact has been investigated for n-4H-SiC. It is shown that a Schottky barrier is formed in the samples during the vacuum heat treatment at 700°C, and at 950°C nickel atoms begin to actively diffuse into the n-4H-SiC crystal, which leads to the disappearance of the sharp metal-semiconductor interface and, consequently, to the disappearance of the Schottky barrier. The resistivity of nickel ohmic contacts obtained for n-type 4H-SiC is determined. The lowest resistivity of ohmic contact was about 17×10−5 Ohm·cm.
| Mualliflar | Жураев, Х.Н., Хажиев, М.У., Давлатов, А.Б., Абдулазизов, Б.Т., Атабаев, Б.Г. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-06-25 |
| Jild | 25 |
| Son | 2 |
| Til | Rus |
| DOI | 10.52304/.v25i2.419 |
DOI: 10.52304/.v25i2.419 · Maqolaning asl sahifasi
4H-SiC, омический контакт, термическая обработка, барьер Шоттки, 4H-SiC, ohmic contact, thermal treatments, Schottky barrier
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