Emission Properties and Electronic Structure of Three-Component Nanofilms Formed on a GaP Surface during Low-Energy Ion Implantation and Subsequent Annealing

Ширинов, Г.М., Донаев, С.Б., Умирзаков, Б.Е.

O‘zbekiston fizika jurnali · 2023-yil

Annotatsiya

By implantation of Al+and In+ions and subsequent annealing on the GaP surface, thin singlecrystal GaAlP and GaInP films were obtained. For the first time using the methods of Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, light absorption and taking the energy and angular dependences of the secondary electron emission coefficients, the main parameters of the energy bands and the emission parameters of the Ga0.6Al0.4P/GaP(111) and Ga0.6In0.4P/GaP(111) with thickness ≤50 Å nanofilms were determined. In particular, it is shown that the band gap Eg of the Ga0.6In0.4P/GaP film is noticeably smaller than the Eg of the substrate; therefore, the values of σm and K of the system somewhat decrease relative to pure GaP.

Maqola ma’lumotlari
MualliflarШиринов, Г.М., Донаев, С.Б., Умирзаков, Б.Е.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2023-06-25
Jild25
Son2
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v25i2.427
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v25i2.427 · Maqolaning asl sahifasi

Kalit so‘zlar

низкоэнергетический ионная имплантация, отжиг, поверхность, наноструктура, концентрация, трехкомпонентная нанопленка, тонкая пленка, w-energy ion implantation, annealing, surface, nanostructure, concentration, threecomponent nanofilm, thin film

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAШиринов, Г.М., Донаев, С.Б., & Умирзаков, Б.Е. (2023). Emission Properties and Electronic Structure of Three-Component Nanofilms Formed on a GaP Surface during Low-Energy Ion Implantation and Subsequent Annealing. O‘zbekiston fizika jurnali, 25(2). https://doi.org/10.52304/.v25i2.427
GOST (OAK)Ширинов, Г.М., Донаев, С.Б., Умирзаков, Б.Е. Emission Properties and Electronic Structure of Three-Component Nanofilms Formed on a GaP Surface during Low-Energy Ion Implantation and Subsequent Annealing // O‘zbekiston fizika jurnali. – 2023. – T. 25, № 2. – DOI: 10.52304/.v25i2.427.
MLAШиринов, Г.М., Донаев, С.Б., and Умирзаков, Б.Е. “Emission Properties and Electronic Structure of Three-Component Nanofilms Formed on a GaP Surface during Low-Energy Ion Implantation and Subsequent Annealing.” O‘zbekiston fizika jurnali, 25(2), 2023. https://doi.org/10.52304/.v25i2.427
ChicagoШиринов, Г.М., Донаев, С.Б., and Умирзаков, Б.Е. “Emission Properties and Electronic Structure of Three-Component Nanofilms Formed on a GaP Surface during Low-Energy Ion Implantation and Subsequent Annealing.” O‘zbekiston fizika jurnali, 25(2) (2023). https://doi.org/10.52304/.v25i2.427
HarvardШиринов, Г.М., Донаев, С.Б., and Умирзаков, Б.Е (2023) ‘Emission Properties and Electronic Structure of Three-Component Nanofilms Formed on a GaP Surface during Low-Energy Ion Implantation and Subsequent Annealing’, O‘zbekiston fizika jurnali, 25(2). https://doi.org/10.52304/.v25i2.427
BibTeX
@article{article2023,
  title = {Emission Properties and Electronic Structure of Three-Component Nanofilms Formed on a GaP Surface during Low-Energy Ion Implantation and Subsequent Annealing},
  author = {Ширинов, Г.М. and Донаев, С.Б. and Умирзаков, Б.Е.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2023},
  volume = {25},
  number = {2},
  doi = {10.52304/.v25i2.427},
  url = {https://doi.org/10.52304/.v25i2.427}
}

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