By implantation of Al+and In+ions and subsequent annealing on the GaP surface, thin singlecrystal GaAlP and GaInP films were obtained. For the first time using the methods of Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, light absorption and taking the energy and angular dependences of the secondary electron emission coefficients, the main parameters of the energy bands and the emission parameters of the Ga0.6Al0.4P/GaP(111) and Ga0.6In0.4P/GaP(111) with thickness ≤50 Å nanofilms were determined. In particular, it is shown that the band gap Eg of the Ga0.6In0.4P/GaP film is noticeably smaller than the Eg of the substrate; therefore, the values of σm and K of the system somewhat decrease relative to pure GaP.
| Mualliflar | Ширинов, Г.М., Донаев, С.Б., Умирзаков, Б.Е. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-06-25 |
| Jild | 25 |
| Son | 2 |
| Til | Rus |
| DOI | 10.52304/.v25i2.427 |
DOI: 10.52304/.v25i2.427 · Maqolaning asl sahifasi
низкоэнергетический ионная имплантация, отжиг, поверхность, наноструктура, концентрация, трехкомпонентная нанопленка, тонкая пленка, w-energy ion implantation, annealing, surface, nanostructure, concentration, threecomponent nanofilm, thin film
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