In this paper, we consider the analysis of the dependence of the diffusion capacitance on the voltage of a tunnel diode based on germanium Ge, according to the Tsu-Esaki model and the theory of Knott and de Mass. It has been theoretically showed that a sharp increase in the electron gas temperature strongly affects the current-voltage characteristic of a tunnel diode, causing a decrease in the area with negative differential resistance in the current-voltage characteristic, and is the cause of an increase in diffusion capacitance. In addition, it has been observed that an increase in diffusion capacitance leads to a decrease in the quality factor of a tunnel diode.
| Mualliflar | Гулямов, Г., Дадамирзаев, М.Г., Уктамова, М.К. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-04-03 |
| Jild | 25 |
| Son | 1 |
| Til | Rus |
| DOI | 10.52304/.v25i1.399 |
DOI: 10.52304/.v25i1.399 · Maqolaning asl sahifasi
модель Тсу-Эсаки, теория Нотта и де Масса, фактор качества, дифференциальное сопротивление, диффузионная ёмкость, Tsu-Esaki model, Knott and de Mass theory, diffusion capacitance, quality factor, differential resistance
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