Calculation of the diffusion capacitance of a tunnel diode in a microwave field based on various models

Гулямов, Г., Дадамирзаев, М.Г., Уктамова, М.К.

O‘zbekiston fizika jurnali · 2023-yil

Annotatsiya

In this paper, we consider the analysis of the dependence of the diffusion capacitance on the voltage of a tunnel diode based on germanium Ge, according to the Tsu-Esaki model and the theory of Knott and de Mass. It has been theoretically showed that a sharp increase in the electron gas temperature strongly affects the current-voltage characteristic of a tunnel diode, causing a decrease in the area with negative differential resistance in the current-voltage characteristic, and is the cause of an increase in diffusion capacitance. In addition, it has been observed that an increase in diffusion capacitance leads to a decrease in the quality factor of a tunnel diode.

Maqola ma’lumotlari
MualliflarГулямов, Г., Дадамирзаев, М.Г., Уктамова, М.К.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2023-04-03
Jild25
Son1
TilRus
DOI10.52304/.v25i1.399

Kalit so‘zlar

модель Тсу-Эсаки, теория Нотта и де Масса, фактор качества, дифференциальное сопротивление, диффузионная ёмкость, Tsu-Esaki model, Knott and de Mass theory, diffusion capacitance, quality factor, differential resistance

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