Mechanism of current transfer in heterostructures n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y

Зайнабидинов, С.З., Бобоев, А.Й., Абдурахимов, Д.П.

O‘zbekiston fizika jurnali · 2023-yil

Annotatsiya

ngle-crystal solid solutions (ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y are grown by liquid-phase epitaxy. Structures n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y are investigated at various temperatures plotted on a logarithmic scale. It is determined that the forward currents good fit to straight lines and they are described by power-law dependences of the type J = AV αwith different values of α. An analysis of the current-voltage characteristic of the heterostructures n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y with an extended intermediate layer shows that the drift mechanism of charge transfer predominates in the forward current direction

Maqola ma’lumotlari
MualliflarЗайнабидинов, С.З., Бобоев, А.Й., Абдурахимов, Д.П.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2023-04-03
Jild25
Son1
TilRus
DOI10.52304/.v25i1.404

Kalit so‘zlar

твердый раствор, гетеропереход, вольтамперная характеристика, температура, дрейфовый механизм, solid solution, heterojunction, current-voltage characteristic, temperature, drift mechanism

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