Mechanism of current transfer in heterostructures n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y

Зайнабидинов, С.З., Бобоев, А.Й., Абдурахимов, Д.П.

O‘zbekiston fizika jurnali · 2023-yil

Annotatsiya

ngle-crystal solid solutions (ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y are grown by liquid-phase epitaxy. Structures n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y are investigated at various temperatures plotted on a logarithmic scale. It is determined that the forward currents good fit to straight lines and they are described by power-law dependences of the type J = AV αwith different values of α. An analysis of the current-voltage characteristic of the heterostructures n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y with an extended intermediate layer shows that the drift mechanism of charge transfer predominates in the forward current direction

Maqola ma’lumotlari
MualliflarЗайнабидинов, С.З., Бобоев, А.Й., Абдурахимов, Д.П.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2023-04-03
Jild25
Son1
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v25i1.404
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v25i1.404 · Maqolaning asl sahifasi

Kalit so‘zlar

твердый раствор, гетеропереход, вольтамперная характеристика, температура, дрейфовый механизм, solid solution, heterojunction, current-voltage characteristic, temperature, drift mechanism

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAЗайнабидинов, С.З., Бобоев, А.Й., & Абдурахимов, Д.П. (2023). Mechanism of current transfer in heterostructures n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y. O‘zbekiston fizika jurnali, 25(1). https://doi.org/10.52304/.v25i1.404
GOST (OAK)Зайнабидинов, С.З., Бобоев, А.Й., Абдурахимов, Д.П. Mechanism of current transfer in heterostructures n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y // O‘zbekiston fizika jurnali. – 2023. – T. 25, № 1. – DOI: 10.52304/.v25i1.404.
MLAЗайнабидинов, С.З., Бобоев, А.Й., and Абдурахимов, Д.П. “Mechanism of current transfer in heterostructures n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y.” O‘zbekiston fizika jurnali, 25(1), 2023. https://doi.org/10.52304/.v25i1.404
ChicagoЗайнабидинов, С.З., Бобоев, А.Й., and Абдурахимов, Д.П. “Mechanism of current transfer in heterostructures n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y.” O‘zbekiston fizika jurnali, 25(1) (2023). https://doi.org/10.52304/.v25i1.404
HarvardЗайнабидинов, С.З., Бобоев, А.Й., and Абдурахимов, Д.П (2023) ‘Mechanism of current transfer in heterostructures n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y’, O‘zbekiston fizika jurnali, 25(1). https://doi.org/10.52304/.v25i1.404
BibTeX
@article{article2023,
  title = {Mechanism of current transfer in heterostructures n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y},
  author = {Зайнабидинов, С.З. and Бобоев, А.Й. and Абдурахимов, Д.П.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2023},
  volume = {25},
  number = {1},
  doi = {10.52304/.v25i1.404},
  url = {https://doi.org/10.52304/.v25i1.404}
}

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