ngle-crystal solid solutions (ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y are grown by liquid-phase epitaxy. Structures n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y are investigated at various temperatures plotted on a logarithmic scale. It is determined that the forward currents good fit to straight lines and they are described by power-law dependences of the type J = AV αwith different values of α. An analysis of the current-voltage characteristic of the heterostructures n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y with an extended intermediate layer shows that the drift mechanism of charge transfer predominates in the forward current direction
| Mualliflar | Зайнабидинов, С.З., Бобоев, А.Й., Абдурахимов, Д.П. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-04-03 |
| Jild | 25 |
| Son | 1 |
| Til | Rus |
| DOI | 10.52304/.v25i1.404 |
DOI: 10.52304/.v25i1.404 · Maqolaning asl sahifasi
твердый раствор, гетеропереход, вольтамперная характеристика, температура, дрейфовый механизм, solid solution, heterojunction, current-voltage characteristic, temperature, drift mechanism
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