A technique obtaining nanostructured porous silicon by electrochemical etching of singlecrystal silicon wafers is proposed. The results of studies obtained by the methods of Raman scattering of light are presented. They have not characteristic peaks of amorphous silicon, and shows the absence of an amorphous component in the samples. As well as a shift of the peak towards lower energies, that is, to the so-called "red shift" indicates the presence of nanocrystallites in the structure of porous silicon. It was also revealed that the samples have a stable intense photoluminescence in the region of 700–900 nm with maxima of ~771–772 nm, which is a characteristic typical feature of the photoluminescence of nanocrystalline silicon structures. The photoluminescence spectra with a large emission band width are presumably due to the scatter in the size and, possibly, shape of the nanoparticles.
| Mualliflar | Ашуров, Рустам, Адилов, М.М., Турдалиев, Т.К. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-04-03 |
| Jild | 25 |
| Son | 1 |
| Til | Rus |
| DOI | 10.52304/.v25i1.403 |
DOI: 10.52304/.v25i1.403 · Maqolaning asl sahifasi
пористый кремний, электрохимическое травление, спектроскопия комбинационного рассеяния, нанокремний, фотолюминесценция, солнечные элементы, porous silicon, electrochemical etching, Raman spectroscopy, nanosilicon, photoluminescence, solar cells
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