Highly crystalline Sb2Se3 films from a separate sources of Sb and Se elements at a substrate temperature of 500°С were obtained by chemical molecular beam deposition (CMBD) method. The effect of the Sb/Se composition ratio on the morphological and electrical properties of Sb2Se3 films has been studied. Based on the presented images of the scanning electron microscope and X-ray diffraction analysis, it was revealed that all films have a crystalline (orthorhombic) structure and the crystallite size is 2−3 µm. The electrical conductivity of the films measured by the Van der Paw method varies in the range 4.3×10−5 −1×102 (Ohm⋅cm)−1 depending on the composition ratio of the partial pressure of the elements Sb/Se.
| Mualliflar | Разыков, Т.М., Кучкаров, К.М., Мавлонов, А.А., Эргашев, Б.А., Махмудов, М.А., Хуррамов, Р.Р., Исаков, Д.З. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2021-12-27 |
| Jild | 23 |
| Son | 3 |
| Betlar | 49-56 |
| Til | Rus |
| DOI | 10.52304/.v23i3.264 |
DOI: 10.52304/.v23i3.264 · Maqolaning asl sahifasi
электропроводность, структура, рентгенограмма, тонкие пленки, химическое молекулярно-пучковое осаждение, Sb/Se, Sb2Se3, electrical conductivity, structure, X-ray diffraction pattern, thin films, chemical molecular beam deposition, Sb/Se, Sb2Se3
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