Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source

Разыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., Йулдошов, Р.Т.

O‘zbekiston fizika jurnali · 2022-yil

Annotatsiya

Sb2Se3 crystalline films were obtained by chemical molecular beam deposition (CMBD) from separate sources of the Sb2Se3 binary compound and the Se element, at a substrate temperature of 500°С. The main strong peaks (221), (211) and secondary weak peaks (020), (120) and (310) are observed on the X-ray patterns, which noticeably change with the Se temperature. At a selenium source temperature of 430°C, the grains larger than 4 µm are observed on the Sb2Se3 film surface, and rod-like grains of Sb2Se3 appeared. The Sb2Se3 films were Sedeficient at a selenium source temperature of 350°C, and with a further increase in the selenium source temperature, approached the stoichiometric composition. It is shown that Sb2Se3 films close to the stoichiometric composition with the ratio Sb/Se 0.68 are obtained at a selenium source temperature of 430°C. The specific electrical conductivities of Sb2Se3 films range from σ=9×10−5 (Ohm·cm)−1 to σ=6×10−4 (Ohm·cm)−1 depending on the technological regime.

Maqola ma’lumotlari
MualliflarРазыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., Йулдошов, Р.Т.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2022-08-28
Jild24
Son3
Betlar176-182
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v24i3.360
Indeksga qo‘shilgan2026-08-26

Kalit so‘zlar

удельная электропроводность, стехиометрический состав, морфологические свойства, температура источника Se, Sb2Se3, electrical conductivity, morphological properties, selenium source temperature, Sb2Se3, stoichiometric composition

Ilmiy soha

Iqtibos keltirish

APAРазыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., & Йулдошов, Р.Т. (2022). Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source. O‘zbekiston fizika jurnali, 24(3), 176-182. https://doi.org/10.52304/.v24i3.360
GOST (OAK)Разыков, Т.М. va b. Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source // O‘zbekiston fizika jurnali. – 2022. – T. 24, № 3. – P. 176-182. – DOI: 10.52304/.v24i3.360.
MLAРазыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., and Йулдошов, Р.Т. “Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source.” O‘zbekiston fizika jurnali, 24(3), 176-182, 2022. https://doi.org/10.52304/.v24i3.360
ChicagoРазыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., and Йулдошов, Р.Т. “Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source.” O‘zbekiston fizika jurnali, 24(3), 176-182 (2022). https://doi.org/10.52304/.v24i3.360
HarvardРазыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., and Йулдошов, Р.Т (2022) ‘Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source’, O‘zbekiston fizika jurnali, 24(3), 176-182. https://doi.org/10.52304/.v24i3.360
BibTeX
@article{article2022,
  title = {Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source},
  author = {Разыков, Т.М. and Кучкаров, К.М. and Эргашев, Б.А. and Олимов, А. and Йулдошов, Р.Т.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2022},
  volume = {24},
  number = {3},
  pages = {176-182},
  doi = {10.52304/.v24i3.360},
  url = {https://doi.org/10.52304/.v24i3.360}
}

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