Sb2Se3 crystalline films were obtained by chemical molecular beam deposition (CMBD) from separate sources of the Sb2Se3 binary compound and the Se element, at a substrate temperature of 500°С. The main strong peaks (221), (211) and secondary weak peaks (020), (120) and (310) are observed on the X-ray patterns, which noticeably change with the Se temperature. At a selenium source temperature of 430°C, the grains larger than 4 µm are observed on the Sb2Se3 film surface, and rod-like grains of Sb2Se3 appeared. The Sb2Se3 films were Sedeficient at a selenium source temperature of 350°C, and with a further increase in the selenium source temperature, approached the stoichiometric composition. It is shown that Sb2Se3 films close to the stoichiometric composition with the ratio Sb/Se 0.68 are obtained at a selenium source temperature of 430°C. The specific electrical conductivities of Sb2Se3 films range from σ=9×10−5 (Ohm·cm)−1 to σ=6×10−4 (Ohm·cm)−1 depending on the technological regime.
| Mualliflar | Разыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., Йулдошов, Р.Т. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2022-08-28 |
| Jild | 24 |
| Son | 3 |
| Betlar | 176-182 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v24i3.360 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v24i3.360 · Maqolaning asl sahifasi
удельная электропроводность, стехиометрический состав, морфологические свойства, температура источника Se, Sb2Se3, electrical conductivity, morphological properties, selenium source temperature, Sb2Se3, stoichiometric composition
| APA | Разыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., & Йулдошов, Р.Т. (2022). Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source. O‘zbekiston fizika jurnali, 24(3), 176-182. https://doi.org/10.52304/.v24i3.360 |
|---|---|
| GOST (OAK) | Разыков, Т.М. va b. Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source // O‘zbekiston fizika jurnali. – 2022. – T. 24, № 3. – P. 176-182. – DOI: 10.52304/.v24i3.360. |
| MLA | Разыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., and Йулдошов, Р.Т. “Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source.” O‘zbekiston fizika jurnali, 24(3), 176-182, 2022. https://doi.org/10.52304/.v24i3.360 |
| Chicago | Разыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., and Йулдошов, Р.Т. “Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source.” O‘zbekiston fizika jurnali, 24(3), 176-182 (2022). https://doi.org/10.52304/.v24i3.360 |
| Harvard | Разыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., and Йулдошов, Р.Т (2022) ‘Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source’, O‘zbekiston fizika jurnali, 24(3), 176-182. https://doi.org/10.52304/.v24i3.360 |
| BibTeX | @article{article2022,
title = {Structural, morphological and electrophysical properties of Sb2Se3 films obtained at different temperatures of the selenium source},
author = {Разыков, Т.М. and Кучкаров, К.М. and Эргашев, Б.А. and Олимов, А. and Йулдошов, Р.Т.},
journal = {O‘zbekiston fizika jurnali},
year = {2022},
volume = {24},
number = {3},
pages = {176-182},
doi = {10.52304/.v24i3.360},
url = {https://doi.org/10.52304/.v24i3.360}
} |
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