Sb2Se3 crystalline films were obtained by chemical molecular beam deposition (CMBD) from separate sources of the Sb2Se3 binary compound and the Se element, at a substrate temperature of 500°С. The main strong peaks (221), (211) and secondary weak peaks (020), (120) and (310) are observed on the X-ray patterns, which noticeably change with the Se temperature. At a selenium source temperature of 430°C, the grains larger than 4 µm are observed on the Sb2Se3 film surface, and rod-like grains of Sb2Se3 appeared. The Sb2Se3 films were Sedeficient at a selenium source temperature of 350°C, and with a further increase in the selenium source temperature, approached the stoichiometric composition. It is shown that Sb2Se3 films close to the stoichiometric composition with the ratio Sb/Se 0.68 are obtained at a selenium source temperature of 430°C. The specific electrical conductivities of Sb2Se3 films range from σ=9×10−5 (Ohm·cm)−1 to σ=6×10−4 (Ohm·cm)−1 depending on the technological regime.
| Mualliflar | Разыков, Т.М., Кучкаров, К.М., Эргашев, Б.А., Олимов, А., Йулдошов, Р.Т. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2022-08-28 |
| Jild | 24 |
| Son | 3 |
| Betlar | 176-182 |
| Til | Rus |
| DOI | 10.52304/.v24i3.360 |
DOI: 10.52304/.v24i3.360 · Maqolaning asl sahifasi
удельная электропроводность, стехиометрический состав, морфологические свойства, температура источника Se, Sb2Se3, electrical conductivity, morphological properties, selenium source temperature, Sb2Se3, stoichiometric composition
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