Fabrication of CoSi2/SiO2/Si(111) Films by Laser Deposition and Their Electrophysical Properties

Умирзаков, Б.Е., Бекпулатов, И.Р., Игамов, Б.Д., Турапов, И.Х., Фаттахов, А.З.

O‘zbekiston fizika jurnali · 2022-yil

Annotatsiya

In this study, the optimal regime for the formation of CoSi2 pellets by high-temperature pressing is determined. A CoSi2/SiO2/Si(111) film was created by deposition of CoSi2 onto a SiO2/Si(111) substrate sputtered under the action of a solid-state pulsed laser. A study of the dependence of the energy of photons absorbed by the film on the wavelength of incident photons showed that the band gap is very sensitive to wavelengths in the visible and IR regions. X-ray diffraction analysis of the CoSi2/SiO2/Si(111) system formed at thermal heating showed that the CoSi2 film has a polycrystalline structure. The elemental composition and band gap of the CoSi2 film of various thicknesses were determined by scanning electron microscopy. For a CoSi2 film with a thickness of ≈3 monolayers the band gap is ~0.8 eV, and for a bulk CoSi2 film it is ~0.6 eV.

Maqola ma’lumotlari
MualliflarУмирзаков, Б.Е., Бекпулатов, И.Р., Игамов, Б.Д., Турапов, И.Х., Фаттахов, А.З.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2022-06-04
Jild24
Son2
Betlar150-155
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v24i2.336
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v24i2.336 · Maqolaning asl sahifasi

Kalit so‘zlar

коэффициент поглощения и отражения света, термический отжиг, ширина запрещенной зоны, распыление, импульсный лазер, light absorption and reflection coefficient, thermal annealing, band gap, sputtering, pulsed laser

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAУмирзаков, Б.Е., Бекпулатов, И.Р., Игамов, Б.Д., Турапов, И.Х., & Фаттахов, А.З. (2022). Fabrication of CoSi2/SiO2/Si(111) Films by Laser Deposition and Their Electrophysical Properties. O‘zbekiston fizika jurnali, 24(2), 150-155. https://doi.org/10.52304/.v24i2.336
GOST (OAK)Умирзаков, Б.Е. va b. Fabrication of CoSi2/SiO2/Si(111) Films by Laser Deposition and Their Electrophysical Properties // O‘zbekiston fizika jurnali. – 2022. – T. 24, № 2. – P. 150-155. – DOI: 10.52304/.v24i2.336.
MLAУмирзаков, Б.Е., Бекпулатов, И.Р., Игамов, Б.Д., Турапов, И.Х., and Фаттахов, А.З. “Fabrication of CoSi2/SiO2/Si(111) Films by Laser Deposition and Their Electrophysical Properties.” O‘zbekiston fizika jurnali, 24(2), 150-155, 2022. https://doi.org/10.52304/.v24i2.336
ChicagoУмирзаков, Б.Е., Бекпулатов, И.Р., Игамов, Б.Д., Турапов, И.Х., and Фаттахов, А.З. “Fabrication of CoSi2/SiO2/Si(111) Films by Laser Deposition and Their Electrophysical Properties.” O‘zbekiston fizika jurnali, 24(2), 150-155 (2022). https://doi.org/10.52304/.v24i2.336
HarvardУмирзаков, Б.Е., Бекпулатов, И.Р., Игамов, Б.Д., Турапов, И.Х., and Фаттахов, А.З (2022) ‘Fabrication of CoSi2/SiO2/Si(111) Films by Laser Deposition and Their Electrophysical Properties’, O‘zbekiston fizika jurnali, 24(2), 150-155. https://doi.org/10.52304/.v24i2.336
BibTeX
@article{article2022,
  title = {Fabrication of CoSi2/SiO2/Si(111) Films by Laser Deposition and Their Electrophysical Properties},
  author = {Умирзаков, Б.Е. and Бекпулатов, И.Р. and Игамов, Б.Д. and Турапов, И.Х. and Фаттахов, А.З.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2022},
  volume = {24},
  number = {2},
  pages = {150-155},
  doi = {10.52304/.v24i2.336},
  url = {https://doi.org/10.52304/.v24i2.336}
}

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