In this study, the optimal regime for the formation of CoSi2 pellets by high-temperature pressing is determined. A CoSi2/SiO2/Si(111) film was created by deposition of CoSi2 onto a SiO2/Si(111) substrate sputtered under the action of a solid-state pulsed laser. A study of the dependence of the energy of photons absorbed by the film on the wavelength of incident photons showed that the band gap is very sensitive to wavelengths in the visible and IR regions. X-ray diffraction analysis of the CoSi2/SiO2/Si(111) system formed at thermal heating showed that the CoSi2 film has a polycrystalline structure. The elemental composition and band gap of the CoSi2 film of various thicknesses were determined by scanning electron microscopy. For a CoSi2 film with a thickness of ≈3 monolayers the band gap is ~0.8 eV, and for a bulk CoSi2 film it is ~0.6 eV.
| Mualliflar | Умирзаков, Б.Е., Бекпулатов, И.Р., Игамов, Б.Д., Турапов, И.Х., Фаттахов, А.З. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2022-06-04 |
| Jild | 24 |
| Son | 2 |
| Betlar | 150-155 |
| Til | Rus |
| DOI | 10.52304/.v24i2.336 |
DOI: 10.52304/.v24i2.336 · Maqolaning asl sahifasi
коэффициент поглощения и отражения света, термический отжиг, ширина запрещенной зоны, распыление, импульсный лазер, light absorption and reflection coefficient, thermal annealing, band gap, sputtering, pulsed laser
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