Photoelectric properties of n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures

Зайнабидинов, С.З., Бобоев, А.Й., Акбаров, А.Ж.

O‘zbekiston fizika jurnali · 2022-yil

Annotatsiya

It is determined that the spectral dependence of the photocurrent covers a wide range of incident photon energies from 1.07 eV to 3 eV. It is shown that with an increase in the temperature of the onset of crystallization, the maxima of the spectral dependence of the photoEMF shift to a shorter wavelength region, and the onset of crystallization of the solid solution layer of the (GaAs)1–x–у(Ge2)x(ZnSe)y increases. The lifetime of photocarriers increases from 10−7 s up to 5×10−5 s when the temperature of the crystallization onset increases from 650°C up to 730°С.

Maqola ma’lumotlari
MualliflarЗайнабидинов, С.З., Бобоев, А.Й., Акбаров, А.Ж.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2022-09-29
Jild24
Son3
Betlar183-185
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v24i3.361
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v24i3.361 · Maqolaning asl sahifasi

Kalit so‘zlar

фотолюминесценция, фоточувствительность, фотоЭДС, фототок, температура кристаллизация, твердый раствор, гетеропереход, photoluminescence, photoEMF, photosensitivity, photocurrent, crystallization temperature, solid solution, heterojunction

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAЗайнабидинов, С.З., Бобоев, А.Й., & Акбаров, А.Ж. (2022). Photoelectric properties of n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures. O‘zbekiston fizika jurnali, 24(3), 183-185. https://doi.org/10.52304/.v24i3.361
GOST (OAK)Зайнабидинов, С.З., Бобоев, А.Й., Акбаров, А.Ж. Photoelectric properties of n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures // O‘zbekiston fizika jurnali. – 2022. – T. 24, № 3. – P. 183-185. – DOI: 10.52304/.v24i3.361.
MLAЗайнабидинов, С.З., Бобоев, А.Й., and Акбаров, А.Ж. “Photoelectric properties of n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures.” O‘zbekiston fizika jurnali, 24(3), 183-185, 2022. https://doi.org/10.52304/.v24i3.361
ChicagoЗайнабидинов, С.З., Бобоев, А.Й., and Акбаров, А.Ж. “Photoelectric properties of n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures.” O‘zbekiston fizika jurnali, 24(3), 183-185 (2022). https://doi.org/10.52304/.v24i3.361
HarvardЗайнабидинов, С.З., Бобоев, А.Й., and Акбаров, А.Ж (2022) ‘Photoelectric properties of n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures’, O‘zbekiston fizika jurnali, 24(3), 183-185. https://doi.org/10.52304/.v24i3.361
BibTeX
@article{article2022,
  title = {Photoelectric properties of n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures},
  author = {Зайнабидинов, С.З. and Бобоев, А.Й. and Акбаров, А.Ж.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2022},
  volume = {24},
  number = {3},
  pages = {183-185},
  doi = {10.52304/.v24i3.361},
  url = {https://doi.org/10.52304/.v24i3.361}
}

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