Photoelectric properties of n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y heterostructures

Зайнабидинов, С.З., Бобоев, А.Й., Акбаров, А.Ж.

O‘zbekiston fizika jurnali · 2022-yil

Annotatsiya

It is determined that the spectral dependence of the photocurrent covers a wide range of incident photon energies from 1.07 eV to 3 eV. It is shown that with an increase in the temperature of the onset of crystallization, the maxima of the spectral dependence of the photoEMF shift to a shorter wavelength region, and the onset of crystallization of the solid solution layer of the (GaAs)1–x–у(Ge2)x(ZnSe)y increases. The lifetime of photocarriers increases from 10−7 s up to 5×10−5 s when the temperature of the crystallization onset increases from 650°C up to 730°С.

Maqola ma’lumotlari
MualliflarЗайнабидинов, С.З., Бобоев, А.Й., Акбаров, А.Ж.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2022-09-29
Jild24
Son3
Betlar183-185
TilRus
DOI10.52304/.v24i3.361

Kalit so‘zlar

фотолюминесценция, фоточувствительность, фотоЭДС, фототок, температура кристаллизация, твердый раствор, гетеропереход, photoluminescence, photoEMF, photosensitivity, photocurrent, crystallization temperature, solid solution, heterojunction

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