It is determined that the spectral dependence of the photocurrent covers a wide range of incident photon energies from 1.07 eV to 3 eV. It is shown that with an increase in the temperature of the onset of crystallization, the maxima of the spectral dependence of the photoEMF shift to a shorter wavelength region, and the onset of crystallization of the solid solution layer of the (GaAs)1–x–у(Ge2)x(ZnSe)y increases. The lifetime of photocarriers increases from 10−7 s up to 5×10−5 s when the temperature of the crystallization onset increases from 650°C up to 730°С.
| Mualliflar | Зайнабидинов, С.З., Бобоев, А.Й., Акбаров, А.Ж. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2022-09-29 |
| Jild | 24 |
| Son | 3 |
| Betlar | 183-185 |
| Til | Rus |
| DOI | 10.52304/.v24i3.361 |
DOI: 10.52304/.v24i3.361 · Maqolaning asl sahifasi
фотолюминесценция, фоточувствительность, фотоЭДС, фототок, температура кристаллизация, твердый раствор, гетеропереход, photoluminescence, photoEMF, photosensitivity, photocurrent, crystallization temperature, solid solution, heterojunction
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