The expediency of use of returning technologies in the processes of gas-phase production of silicon epitaxial structures for solar cells, which previously proved themselves well in the chloride production of raw silicon, which led to a significant reduction in the cost of the material and "solar electricity", is shown. Mathematical models of gas etching operations, growth of epitaxial layers and support layers of polycrystalline silicon are presented, which are applicable to any type of technological growth equipment provided that the necessary values of the linear velocity of the vapor-gas mixture in the deposition zone, as well as the overpressure in the evaporator with silicon tetrachloride and in the reactor, depending on flow rate of the passed vapor-gas mixture. The advantages of gas-phase epitaxy combined with returning technologies and the prospects for its application in the production of solar cells on multisilicon substrates and converters with increased sensitivity in the IR region of the solar spectrum are discussed.
| Mualliflar | Абдурахманов, Б.М., Адилов, М.М., Кучканов, Ш.К., Ашуров, Х.Б., Исмайлов, Б.К. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2022-08-21 |
| Jild | 24 |
| Son | 3 |
| Betlar | 219-223 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v24i3.366 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v24i3.366 · Maqolaning asl sahifasi
солнечный элемент, парогазовая смесь, тетрахлорид кремния, оборотная технология, газофазная эпитаксия, поликристаллический кремний, solar cell, gasvapor mixture, silicon tetrachloride, returning technology, gas-phase epitaxy, polycrystalline silicon
| APA | Абдурахманов, Б.М., Адилов, М.М., Кучканов, Ш.К., Ашуров, Х.Б., & Исмайлов, Б.К. (2022). Obtaining epitaxial silicon structures for solar cells using reverse technologies. O‘zbekiston fizika jurnali, 24(3), 219-223. https://doi.org/10.52304/.v24i3.366 |
|---|---|
| GOST (OAK) | Абдурахманов, Б.М. va b. Obtaining epitaxial silicon structures for solar cells using reverse technologies // O‘zbekiston fizika jurnali. – 2022. – T. 24, № 3. – P. 219-223. – DOI: 10.52304/.v24i3.366. |
| MLA | Абдурахманов, Б.М., Адилов, М.М., Кучканов, Ш.К., Ашуров, Х.Б., and Исмайлов, Б.К. “Obtaining epitaxial silicon structures for solar cells using reverse technologies.” O‘zbekiston fizika jurnali, 24(3), 219-223, 2022. https://doi.org/10.52304/.v24i3.366 |
| Chicago | Абдурахманов, Б.М., Адилов, М.М., Кучканов, Ш.К., Ашуров, Х.Б., and Исмайлов, Б.К. “Obtaining epitaxial silicon structures for solar cells using reverse technologies.” O‘zbekiston fizika jurnali, 24(3), 219-223 (2022). https://doi.org/10.52304/.v24i3.366 |
| Harvard | Абдурахманов, Б.М., Адилов, М.М., Кучканов, Ш.К., Ашуров, Х.Б., and Исмайлов, Б.К (2022) ‘Obtaining epitaxial silicon structures for solar cells using reverse technologies’, O‘zbekiston fizika jurnali, 24(3), 219-223. https://doi.org/10.52304/.v24i3.366 |
| BibTeX | @article{article2022,
title = {Obtaining epitaxial silicon structures for solar cells using reverse technologies},
author = {Абдурахманов, Б.М. and Адилов, М.М. and Кучканов, Ш.К. and Ашуров, Х.Б. and Исмайлов, Б.К.},
journal = {O‘zbekiston fizika jurnali},
year = {2022},
volume = {24},
number = {3},
pages = {219-223},
doi = {10.52304/.v24i3.366},
url = {https://doi.org/10.52304/.v24i3.366}
} |
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