The effect of irradiation by γ-quanta on the mechanism of current transfer in Al-p-CdTe-Mo structures with an extended base (w = 120 μm) is considered. It is shown that the direct branch of the сurrent-voltage characteristic (СVC) of the Al-p-CdTe-Mo structure before and after irradiation is described by the dependence J ~ Vβ with β = 1.2 in D section and β = 3.45 in section F. The value of the resistivity of the p-CdTe layer determined from the direct branch of the CVC is ρ 2.1×107 Ωcm, it corresponds to the resistivity value of the original p-CdTe film. The sharp increase in current experimentally observed in the second (F) section of the direct branch of CVC confirms once again that the frontal heterojunction (n+-p-heterojunction Al-n-Al2O3-p-CdTe) is much superior in quality to the rear heterojunction (p-n-junction p-CdTe-n-MoO3-Mo).
| Mualliflar | Ачилов, А.С., Кабулов, Р.Р. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2022-05-29 |
| Jild | 24 |
| Son | 2 |
| Betlar | 133-138 |
| Til | Rus |
| DOI | 10.52304/.v24i2.333 |
DOI: 10.52304/.v24i2.333 · Maqolaning asl sahifasi
рекомбинация, концентрация, диффузионный и дрейфовый ток, γ-облучение, коэффициент выпрямления, гетеропереход, столбчатая структура, CdTe, recombination, concentration, diffusion and drift current, γ-irradiation, rectification coefficient, heterojunction, columnar structure, CdTe
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