In this work, thin films of Mn4Si7 were grown by the methods of magnetron and laser sputtering of bulk manganese silicide Mn4Si7 on the surface of various substrates (Si, SiO2, sitall, and mica), the optimal modes of film formation were determined, which ensure high values of thermoelectric characteristics. In addition, the surface morphology, crystal structure, and elemental composition of the obtained films were investigated. It was found that the thermoelectric power of films of higher manganese silicide during the transition from the amorphous state to the nanocrystalline state increases, which is explained by the selective scattering of charge carriers at the boundaries of nanoclusters. It was also shown that the highest conversion coefficient is possessed by higher manganese silicide films grown on a mica substrate, which is associated with the low thermal conductivity of mica. Films on SiO2 have a lower conversion coefficient, but they have a high speed of response, and films on mica and sitall have a high sensitivity, and therefore they can be used in detectors of thermal radiation of IR waves.
| Mualliflar | Клечковская, В.В., Рысбаев, А.С., Камилов, Т.С., Бекпулатов, И.Р., Игамов, Б.Д., Турапов, И.Х. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2021-12-27 |
| Jild | 23 |
| Son | 3 |
| Betlar | 43-46 |
| Til | Rus |
| DOI | 10.52304/.v23i3.263 |
DOI: 10.52304/.v23i3.263 · Maqolaning asl sahifasi
морфология поверхности, коэффициент термоэдс, магнетронное распыление, пленки высшего силицида марганца (ВСМ), удельное сопротивление, лазерное нанесение пленок, surface morphology, thermoelectric coefficient, thermoelectric force, resistivity, laser deposition of films, magnetron sputtering, films of higher manganese silicide (HMS)
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