Influence of structural defects in silicon on the formation of photosensitive heterostructures Mn4Si7-Si -Mn4Si7 and Mn4Si7-Si -m

Камилов, Т.С., Рысбаев, А.С., Клечковская, В.В., Орехов, А.С, Турапов, И.Х.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

Effect of a transition amorphous layer at the interface between higher manganese silicide (HMS) Mn4Si7 and silicon doped with manganese (Si<Mn>) on the photoelectric properties of heterostructures has been considered. The role of the initial structural defects in the surface layers of single-crystal silicon on the penetration of manganese atoms into Si upon doping from the gas phase is shown. It has been established that on the silicon surface, the precipitated Mn atoms at high temperatures (T>1050°C) are grouped (due to surface diffusion), forming droplets of liquid manganese, which dissolve the nearsurface silicon layer, forming a liquid solution-melt Mn with Si. In the process of the entry of Mn atoms from the vapor phase into the liquid solution-melt and the diffusion entry of Si atoms from the frontier regions, including the amorphous bulk Si layer, the solution-melt size increases and hardens. During hardening, higher manganese silicide Mn4Si7 is formed, and under silicide region due to intensive diffusion of Si atoms, the Si-Si bonds break, an amorphous and elastically deformed Si region is formed, which predetermines the evolution of photoelectric phenomena in the heterostructures Mn4Si7-Si<Mn>-Mn4Si7 and Mn4Si7-Si<Mn>-M.

Maqola ma’lumotlari
MualliflarКамилов, Т.С., Рысбаев, А.С., Клечковская, В.В., Орехов, А.С, Турапов, И.Х.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2019-02-21
Jild21
Son1
Betlar22-28
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v21i1.45
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v21i1.45 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAКамилов, Т.С., Рысбаев, А.С., Клечковская, В.В., Орехов, А.С, & Турапов, И.Х. (2019). INFLUENCE OF STRUCTURAL DEFECTS IN SILICON ON THE FORMATION OF PHOTOSENSITIVE HETEROSTRUCTURES Mn4Si7-Si -Mn4Si7 and Mn4Si7-Si -M. O‘zbekiston fizika jurnali, 21(1), 22-28. https://doi.org/10.52304/.v21i1.45
GOST (OAK)Камилов, Т.С. va b. INFLUENCE OF STRUCTURAL DEFECTS IN SILICON ON THE FORMATION OF PHOTOSENSITIVE HETEROSTRUCTURES Mn4Si7-Si -Mn4Si7 and Mn4Si7-Si -M // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 1. – P. 22-28. – DOI: 10.52304/.v21i1.45.
MLAКамилов, Т.С., Рысбаев, А.С., Клечковская, В.В., Орехов, А.С, and Турапов, И.Х. “INFLUENCE OF STRUCTURAL DEFECTS IN SILICON ON THE FORMATION OF PHOTOSENSITIVE HETEROSTRUCTURES Mn4Si7-Si -Mn4Si7 and Mn4Si7-Si -M.” O‘zbekiston fizika jurnali, 21(1), 22-28, 2019. https://doi.org/10.52304/.v21i1.45
ChicagoКамилов, Т.С., Рысбаев, А.С., Клечковская, В.В., Орехов, А.С, and Турапов, И.Х. “INFLUENCE OF STRUCTURAL DEFECTS IN SILICON ON THE FORMATION OF PHOTOSENSITIVE HETEROSTRUCTURES Mn4Si7-Si -Mn4Si7 and Mn4Si7-Si -M.” O‘zbekiston fizika jurnali, 21(1), 22-28 (2019). https://doi.org/10.52304/.v21i1.45
HarvardКамилов, Т.С., Рысбаев, А.С., Клечковская, В.В., Орехов, А.С, and Турапов, И.Х (2019) ‘INFLUENCE OF STRUCTURAL DEFECTS IN SILICON ON THE FORMATION OF PHOTOSENSITIVE HETEROSTRUCTURES Mn4Si7-Si -Mn4Si7 and Mn4Si7-Si -M’, O‘zbekiston fizika jurnali, 21(1), 22-28. https://doi.org/10.52304/.v21i1.45
BibTeX
@article{article2019,
  title = {INFLUENCE OF STRUCTURAL DEFECTS IN SILICON ON THE FORMATION OF PHOTOSENSITIVE HETEROSTRUCTURES Mn4Si7-Si -Mn4Si7 and Mn4Si7-Si -M},
  author = {Камилов, Т.С. and Рысбаев, А.С. and Клечковская, В.В. and Орехов, А.С and Турапов, И.Х.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2019},
  volume = {21},
  number = {1},
  pages = {22-28},
  doi = {10.52304/.v21i1.45},
  url = {https://doi.org/10.52304/.v21i1.45}
}

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