In the paper, the DLTS method is used to study the effect of dysprosium atoms on the efficiency of radiation defects formation in n-Si irradiated with γ-quanta 60Co. It is shown that formation of A-centers dominates in silicon with oxygen, and in oxygen-free silicon E-centers dominate. It was found that the presence of Dy in the volume of silicon leads to a slowdown in the process of radiation defect formation. The concentration of A-centers and E-centers in the n-Si samples 2-4 times less than the control samples.
| Mualliflar | Далиев, Х.С., Утамурадова, Ш.Б., Далиев, Ш.Х., Дехканов, М.Ш., Норкулов, Ш.Б. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-03-21 |
| Jild | 20 |
| Son | 2 |
| Betlar | 131-133 |
| Til | Rus |
| DOI | 10.52304/.v20i2.39 |
DOI: 10.52304/.v20i2.39 · Maqolaning asl sahifasi
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