In the paper, the DLTS method is used to study the effect of dysprosium atoms on the efficiency of radiation defects formation in n-Si irradiated with γ-quanta 60Co. It is shown that formation of A-centers dominates in silicon with oxygen, and in oxygen-free silicon E-centers dominate. It was found that the presence of Dy in the volume of silicon leads to a slowdown in the process of radiation defect formation. The concentration of A-centers and E-centers in the n-Si samples 2-4 times less than the control samples.
| Mualliflar | Далиев, Х.С., Утамурадова, Ш.Б., Далиев, Ш.Х., Дехканов, М.Ш., Норкулов, Ш.Б. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2018-03-21 |
| Jild | 20 |
| Son | 2 |
| Betlar | 131-133 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v20i2.39 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v20i2.39 · Maqolaning asl sahifasi
| APA | Далиев, Х.С., Утамурадова, Ш.Б., Далиев, Ш.Х., Дехканов, М.Ш., & Норкулов, Ш.Б. (2018). ON THE INFLUENCE OF DISPROSION ON THE PROCESSES OF RADIATION DEFECT FORMATION IN SILICON. O‘zbekiston fizika jurnali, 20(2), 131-133. https://doi.org/10.52304/.v20i2.39 |
|---|---|
| GOST (OAK) | Далиев, Х.С. va b. ON THE INFLUENCE OF DISPROSION ON THE PROCESSES OF RADIATION DEFECT FORMATION IN SILICON // O‘zbekiston fizika jurnali. – 2018. – T. 20, № 2. – P. 131-133. – DOI: 10.52304/.v20i2.39. |
| MLA | Далиев, Х.С., Утамурадова, Ш.Б., Далиев, Ш.Х., Дехканов, М.Ш., and Норкулов, Ш.Б. “ON THE INFLUENCE OF DISPROSION ON THE PROCESSES OF RADIATION DEFECT FORMATION IN SILICON.” O‘zbekiston fizika jurnali, 20(2), 131-133, 2018. https://doi.org/10.52304/.v20i2.39 |
| Chicago | Далиев, Х.С., Утамурадова, Ш.Б., Далиев, Ш.Х., Дехканов, М.Ш., and Норкулов, Ш.Б. “ON THE INFLUENCE OF DISPROSION ON THE PROCESSES OF RADIATION DEFECT FORMATION IN SILICON.” O‘zbekiston fizika jurnali, 20(2), 131-133 (2018). https://doi.org/10.52304/.v20i2.39 |
| Harvard | Далиев, Х.С., Утамурадова, Ш.Б., Далиев, Ш.Х., Дехканов, М.Ш., and Норкулов, Ш.Б (2018) ‘ON THE INFLUENCE OF DISPROSION ON THE PROCESSES OF RADIATION DEFECT FORMATION IN SILICON’, O‘zbekiston fizika jurnali, 20(2), 131-133. https://doi.org/10.52304/.v20i2.39 |
| BibTeX | @article{article2018,
title = {ON THE INFLUENCE OF DISPROSION ON THE PROCESSES OF RADIATION DEFECT FORMATION IN SILICON},
author = {Далиев, Х.С. and Утамурадова, Ш.Б. and Далиев, Ш.Х. and Дехканов, М.Ш. and Норкулов, Ш.Б.},
journal = {O‘zbekiston fizika jurnali},
year = {2018},
volume = {20},
number = {2},
pages = {131-133},
doi = {10.52304/.v20i2.39},
url = {https://doi.org/10.52304/.v20i2.39}
} |
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