It was found that recombination properties of the p-Si<B,Ni> at the doses up to∼1×108 R are more stable than in the control silicon. It is possible, this fact is connected with the different degree of the microinhomogeneity of conduction in the doped silicon. It is shown that with increasing concentration of nickel atoms radiation stability τ has improved in the doped silicon. This is due to the increase in the number of impurity pairs such as a nickel-oxygen. A possible scheme of quasi-chemical reactions of impurity atoms and lattice defects in the doped silicon has been presented. It is shown that in the initial phase of γ-radiation (up to 5×108 R) in overcompensated p-Si<P,Ni> the photosensitivity increases, and with further increase of dose it reduces. Increase of the specific integrated sensitivity is connected with growth of the barrier between the high-resistance and low-resistance areas, and, on the contrary, with reduction of that barrier. As a result, role of recombination centers increases.
| Mualliflar | Зайнабидинов, C.З., Курбанов, А.О. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-03-21 |
| Jild | 20 |
| Son | 2 |
| Betlar | 105-111 |
| Til | Rus |
| DOI | 10.52304/.v20i2.35 |
DOI: 10.52304/.v20i2.35 · Maqolaning asl sahifasi
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