Effect of γ radiation on recombination and photoelectric properties of silicon, doped with nickel

Зайнабидинов, C.З., Курбанов, А.О.

O‘zbekiston fizika jurnali · 2018-yil

Annotatsiya

It was found that recombination properties of the p-Si<B,Ni> at the doses up to∼1×108 R are more stable than in the control silicon. It is possible, this fact is connected with the different degree of the microinhomogeneity of conduction in the doped silicon. It is shown that with increasing concentration of nickel atoms radiation stability τ has improved in the doped silicon. This is due to the increase in the number of impurity pairs such as a nickel-oxygen. A possible scheme of quasi-chemical reactions of impurity atoms and lattice defects in the doped silicon has been presented. It is shown that in the initial phase of γ-radiation (up to 5×108 R) in overcompensated p-Si<P,Ni> the photosensitivity increases, and with further increase of dose it reduces. Increase of the specific integrated sensitivity is connected with growth of the barrier between the high-resistance and low-resistance areas, and, on the contrary, with reduction of that barrier. As a result, role of recombination centers increases.

Maqola ma’lumotlari
MualliflarЗайнабидинов, C.З., Курбанов, А.О.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2018-03-21
Jild20
Son2
Betlar105-111
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v20i2.35
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v20i2.35 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAЗайнабидинов, C.З., & Курбанов, А.О. (2018). EFFECT OF γ RADIATION ON RECOMBINATION AND PHOTOELECTRIC PROPERTIES OF SILICON, DOPED WITH NICKEL. O‘zbekiston fizika jurnali, 20(2), 105-111. https://doi.org/10.52304/.v20i2.35
GOST (OAK)Зайнабидинов, C.З., Курбанов, А.О. EFFECT OF γ RADIATION ON RECOMBINATION AND PHOTOELECTRIC PROPERTIES OF SILICON, DOPED WITH NICKEL // O‘zbekiston fizika jurnali. – 2018. – T. 20, № 2. – P. 105-111. – DOI: 10.52304/.v20i2.35.
MLAЗайнабидинов, C.З., and Курбанов, А.О. “EFFECT OF γ RADIATION ON RECOMBINATION AND PHOTOELECTRIC PROPERTIES OF SILICON, DOPED WITH NICKEL.” O‘zbekiston fizika jurnali, 20(2), 105-111, 2018. https://doi.org/10.52304/.v20i2.35
ChicagoЗайнабидинов, C.З., and Курбанов, А.О. “EFFECT OF γ RADIATION ON RECOMBINATION AND PHOTOELECTRIC PROPERTIES OF SILICON, DOPED WITH NICKEL.” O‘zbekiston fizika jurnali, 20(2), 105-111 (2018). https://doi.org/10.52304/.v20i2.35
HarvardЗайнабидинов, C.З., and Курбанов, А.О (2018) ‘EFFECT OF γ RADIATION ON RECOMBINATION AND PHOTOELECTRIC PROPERTIES OF SILICON, DOPED WITH NICKEL’, O‘zbekiston fizika jurnali, 20(2), 105-111. https://doi.org/10.52304/.v20i2.35
BibTeX
@article{c2018,
  title = {EFFECT OF γ RADIATION ON RECOMBINATION AND PHOTOELECTRIC PROPERTIES OF SILICON, DOPED WITH NICKEL},
  author = {Зайнабидинов, C.З. and Курбанов, А.О.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2018},
  volume = {20},
  number = {2},
  pages = {105-111},
  doi = {10.52304/.v20i2.35},
  url = {https://doi.org/10.52304/.v20i2.35}
}

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