By the X-ray diffraction method, the formation of copper-oxygen nanocrystallites and the locations of copper atoms in three positions in doped silicon single crystals (in the interstitial position in the lattice matrix and in the composition of Cu2O and CuO nanocrystallites) were shown. It is assumed that each nanostate of copper with oxygen forms the corresponding discrete deep level in doped silicon, the number of levels are determined by the diffusion regimes and the cooling rate of the samples.
| Mualliflar | Ташметов, М.Ю., Каланов, М., Махкамов, Ш., Умарова, Ф.Т., Саттиев, А.Р., Эрдонов, М.Н., Холмедов, Х.М. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-03-21 |
| Jild | 20 |
| Son | 2 |
| Betlar | 90-97 |
| Til | Rus |
| DOI | 10.52304/.v20i2.33 |
DOI: 10.52304/.v20i2.33 · Maqolaning asl sahifasi
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