Study of the current transfer mechanism in n-GaAs-p- (GaAs) 1-x-y (Ge2) x (ZnSe) y heterostructures

Зайнабидинов, С.З., Лейдерман, А.Ю., Бобоев, А.Й.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

It is found that the direct branch of I–V characteristic of the n-GaAs-р-(GaAs)1−x−y(Ge2)x(ZnSe)y heterostructures has the site of sublinear current growth with the voltage of the type V=V0exp(Jad). The concentrations of deep impurities responsible for the appearance of the sublinear site of I–V characteristic are evaluated. The experimental results are explained on the basis of the effect of injection depletion theory. It is shown that the mobility of the main carriers decreases and that the mobility of the non-main carriers increases with increasing temperature.

Maqola ma’lumotlari
MualliflarЗайнабидинов, С.З., Лейдерман, А.Ю., Бобоев, А.Й.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2019-02-21
Jild21
Son1
Betlar14-21
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v21i1.44
Indeksga qo‘shilgan2026-08-26

Ilmiy soha

Iqtibos keltirish

APAЗайнабидинов, С.З., Лейдерман, А.Ю., & Бобоев, А.Й. (2019). STUDY OF THE CURRENT TRANSFER MECHANISM IN n-GaAs-p- (GaAs) 1-x-y (Ge2) x (ZnSe) y HETEROSTRUCTURES. O‘zbekiston fizika jurnali, 21(1), 14-21. https://doi.org/10.52304/.v21i1.44
GOST (OAK)Зайнабидинов, С.З., Лейдерман, А.Ю., Бобоев, А.Й. STUDY OF THE CURRENT TRANSFER MECHANISM IN n-GaAs-p- (GaAs) 1-x-y (Ge2) x (ZnSe) y HETEROSTRUCTURES // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 1. – P. 14-21. – DOI: 10.52304/.v21i1.44.
MLAЗайнабидинов, С.З., Лейдерман, А.Ю., and Бобоев, А.Й. “STUDY OF THE CURRENT TRANSFER MECHANISM IN n-GaAs-p- (GaAs) 1-x-y (Ge2) x (ZnSe) y HETEROSTRUCTURES.” O‘zbekiston fizika jurnali, 21(1), 14-21, 2019. https://doi.org/10.52304/.v21i1.44
ChicagoЗайнабидинов, С.З., Лейдерман, А.Ю., and Бобоев, А.Й. “STUDY OF THE CURRENT TRANSFER MECHANISM IN n-GaAs-p- (GaAs) 1-x-y (Ge2) x (ZnSe) y HETEROSTRUCTURES.” O‘zbekiston fizika jurnali, 21(1), 14-21 (2019). https://doi.org/10.52304/.v21i1.44
HarvardЗайнабидинов, С.З., Лейдерман, А.Ю., and Бобоев, А.Й (2019) ‘STUDY OF THE CURRENT TRANSFER MECHANISM IN n-GaAs-p- (GaAs) 1-x-y (Ge2) x (ZnSe) y HETEROSTRUCTURES’, O‘zbekiston fizika jurnali, 21(1), 14-21. https://doi.org/10.52304/.v21i1.44
BibTeX
@article{article2019,
  title = {STUDY OF THE CURRENT TRANSFER MECHANISM IN n-GaAs-p- (GaAs) 1-x-y (Ge2) x (ZnSe) y HETEROSTRUCTURES},
  author = {Зайнабидинов, С.З. and Лейдерман, А.Ю. and Бобоев, А.Й.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2019},
  volume = {21},
  number = {1},
  pages = {14-21},
  doi = {10.52304/.v21i1.44},
  url = {https://doi.org/10.52304/.v21i1.44}
}

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